US1003FL [SENO]
1.0A GLASS PASSIVATED ULTRAFAST RECOVERY DIODE;
| 型号： | US1003FL |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 1.0A GLASS PASSIVATED ULTRAFAST RECOVERY DIODE 快速恢复二极管 |
| 文件： | 总2页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
US1000FL - US1010FL
1.0A GLASS PASSIVATED ULTRAFAST RECOVERY DIODE
Features
!
!
!
!
!
!
!
!
Glass passivated device
SOD - 123FL
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 25 A Peak
Low Power Loss
Cathode Band
Top View
Ultra-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
2.6±0.2
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Mechanical Data
!
!
Case: SOD-123FL, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
0.7±0.3
!
!
!
!
Weight: 0.01 grams (approx.)
Lead Free: For RoHS / Lead Free Version
3.6±0.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
US1000 US1001 US1002 US1003 US1004 US1006 US1008 US1008
FL FL FL FL FL FL FL FL
Characteristic
Symbol
UNITS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
200
300
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
IO
70
140
210
280
1.0
420
560
700
V
A
Average Rectified Output Current
@TL = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
25
A
1.7
75
Forward Voltage
@IF = 1.0A
VFM
IRM
1.3
2.0
1.0
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
µA
500
50
Reverse Recovery Time (Note 2)
trr
nS
Typical Junction Capacitance (Note 2)
Cj
4
30
pF
Typical Thermal Resistance (Note 3)
RꢀJL
°C/W
°C
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
www.senocn.com
US1000FL – US1010FL
1 of 2
Zibo Seno Electronic Engineering Co., Ltd.
US1000FL - US1010FL
10
ꢀ ꢀ
1.0
0.8
0.6
0.4
0.2
0
1.0
0.1
Single phase half-wave
60 Hz resistive or inductive load
Tj = 25°C
Pulse width = 300 µs
0.01
100
25
50
75
100
125
150 175
200
0.6
0.8
1.0
1.2
1.4
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
20
Tj = 25°C
f = 1MHz
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
10
10
1
0
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
www.senocn.com
US1000FL – US1010FL
2 of 2
相关型号：
©2020 ICPDF网 联系我们和版权申明