UG2001 [SENO]
2.0A GLASS PASSIVATED ULTRAFAST DIODE;型号: | UG2001 |
厂家: | Zibo Seno Electronic Engineering Co.,Ltd |
描述: | 2.0A GLASS PASSIVATED ULTRAFAST DIODE 功效 二极管 |
文件: | 总2页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
UG2001 – UG2008
2.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
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Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
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!
Case: Molded Plastic
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.40 grams (approx.)
Mounting Position: Any
DO-15
Dim
A
Min
24.5
5.50
0.60
2.60
Max
!
!
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!
—
B
7.62
0.80
3.60
C
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UG2001 UG2002 UG2003 UG2004 UG2005 UG2006 UG2007 UG2008
Characteristic
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
V
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
R
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
(Note 1)
2.0
60
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
A
I
Forward Voltage
@IF = 2.0A
VFM
IRM
1.0
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
2.0
100
µA
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
trr
Cj
50
60
75
40
nS
pF
°C
°C
Tj
-55 to +150
-55 to +150
Storage Temperature Range
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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UG2001 – UG2008
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Zibo Seno Electronic Engineering Co., Ltd.
UG2001 – UG2008
ꢀ
2.5
2.0
1.5
1.0
0.5
10
UG2001-UG2004
UG2005
2.0
1.0
UG2006-UG2008
Tj = 25°C
Single phase half-wave
60 Hz resistive or inductive load
Pulse width = 300µs
0.01
100
0
0.6
0.8
1.0
1.2
1.4
25
50
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
75
100
125
150 175
200
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
60
40
20
0
UG2001-UG2005
10
UG2006-UG2008
T = 25°C
j
f = 1.0MHz
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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UG2001 – UG2008
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