SMBYT03-600 [SENO]
3.0A SURFACE MOUNT ULTRAFAST DIODE;型号: | SMBYT03-600 |
厂家: | Zibo Seno Electronic Engineering Co.,Ltd |
描述: | 3.0A SURFACE MOUNT ULTRAFAST DIODE |
文件: | 总2页 (文件大小:158K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
SMBYT03-50 – SMBYT03-1000
3.0A SURFACE MOUNT ULTRAFAST DIODE
Features
B
!
!
!
!
!
!
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 100A Peak
Low Power Loss
Ultra-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
D
J
A
C
G
H
E
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
SMC/DO-214AB
Mechanical Data
Dim
A
Min
5.59
6.60
2.75
0.152
7.75
2.00
0.051
0.76
Max
6.22
7.11
!
!
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
B
C
3.25
0.305
8.13
2.62
0.203
1.27
!
!
D
E
!
!
Weight: 0.20 grams (approx.)
F
G
H
Lead Free: For RoHS / Lead Free Version
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
SMBYT03 SMBYT03 SMBYT03 SMBYT03 SMBYT03 SMBYT03 SMBYT03
Characteristic
Symbol
Unit
-50
-100
-200
-400
-600
-800
-1000
Marking Code
C2
C2
C2
C4
C6
C8
C10
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
50
35
100
70
200
140
400
600
420
800
560
1000
800
V
V
RWM
V
R
RMS Reverse Voltage
VR(RMS)
IO
280
3.0
V
A
Average Rectified Output Current
@TL = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
100
1.3
A
I
Forward Voltage
@IF = 3.0A
VFM
IRM
1.0
1.7
75
V
Peak Reverse Current
@TA = 25°C
2.0
500
µA
At Rated DC Blocking Voltage
@TA = 100°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
trr
Cj
50
nS
pF
25
30
RꢀJL
Tj, TSTG
°C/W
°C
Operating and Storage Temperature Range
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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SMBYT03-50 – SMBYT03-1000
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Zibo Seno Electronic Engineering Co., Ltd.
SMBYT03-50 – SMBYT03-1000
5
50-300
Single phase half wave
Resistive or Inductive load
400
4
10
600-1000
1.0
3
2
1
0.1
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0.01
0.6
1.0
1.4
1.8
0
25
50
75
100 125
150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
200
100
8.3ms single half
sine wave
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0.01
10
0
20
40
60
80
100 120 140
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
trr
+0.5A
50Ω NI (Non inductive)
10Ω NI
Device
Under
Test
( )
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
0.25A
( )
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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SMBYT03-50 – SMBYT03-1000
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