SMBYT01-100 [SENO]
1.0A SURFACE MOUNT ULTRAFAST DIODE;
| 型号： | SMBYT01-100 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 1.0A SURFACE MOUNT ULTRAFAST DIODE |
| 文件： | 总2页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
SMBYT01-50 – SMBYT01-1000
1.0A SURFACE MOUNT ULTRAFAST DIODE
Features
B
!
!
!
!
!
!
Ideally Suited for Automatic Assembly
D
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Ultra-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
A
F
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀE
SMB/DO-214AA
Mechanical Data
Dim
A
Min
3.30
4.06
1.96
0.15
5.00
2.00
0.10
0.76
Max
3.94
4.57
2.21
0.31
5.59
2.62
0.20
1.52
!
!
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
B
C
!
!
!
D
E
Weight: 0.093 grams (approx.)
F
G
H
!
Lead Free: For RoHS / Lead Free Version
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
SMBYT01 SMBYT01 SMBYT01 SMBYT01 SMBYT01 SMBYT01 SMBYT01
Characteristic
Symbol
Unit
-50
-100
-200
-400
-600
-800
-1000
Marking Code
B1
B2
B2
B4
B6
B8
B10
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
50
35
100
70
200
400
600
420
800
560
1000
800
V
V
RWM
V
R
RMS Reverse Voltage
VR(RMS)
IO
140
280
1.0
V
A
Average Rectified Output Current
@TL = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
30
A
I
Forward Voltage
@IF = 1.0A
VFM
IRM
1.0
1.3
1.7
75
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
2.0
500
µA
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
trr
Cj
50
nS
pF
25
30
RꢀJL
Tj, TSTG
°C/W
°C
Operating and Storage Temperature Range
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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SMBYT01-50 – SMBYT01-1000
1 of 2
Zibo Seno Electronic Engineering Co., Ltd.
SMBYT01-50 – SMBYT01-1000
10
1.0
50-300
400
1.0
600-1000
0.5
0.1
Tj 25°C
Pulse Width = 300µs
0
0.01
25
50
75
100
125
( ° C)
Fig. 1 Forward Current Derating Curve
150
0
0.4
0.8
1.2
1.6
2.0
TL, LEAD TEMPERATURE
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
100
Single Half Sine Wave
(JEDEC Method)
30
20
10
Tj = 100°C
10
1.0
Tj = 25°C
0.1
Tj = 150°C
0.01
0
20
40
60
80
100 120 140
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non inductive)
10Ω NI
Device
Under
Test
( )
0A
(+)
( )
Pulse
Generator
(Note 2)
50V DC
Approx
0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
1.0A
Set time base for 10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
2 of 2
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SMBYT01-50 – SMBYT01-1000
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