S1ZB10 [SENO]
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER;
| 型号： | S1ZB10 |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER 二极管 |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
S1ZB05 - S1ZB100(SMD)
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
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Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Flammability 94V-O
1Z(THD)
Min
C
Dim
A
Max
4.10
5.21
10°
A
B
3.65
4.95
0
B
D
D
C
E
K
D
0.15
4.50
2.30
2.54
0.43
2.41
0.41
4.95
2.70
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
G
E
J
H
G
H
Mechanical Data
!
!
Case: 1Z (THD), Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
J
0.74
2.67
K
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Polarity: As Marked on Case
Weight: 0.22 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
S1ZB
05
S1ZB
10
S1ZB
20
S1ZB
40
S1ZB
60
S1ZB
80
S1ZB
100
Unit
Symbol
Characteristic
Device marking code
Z05
50
Z10
100
70
Z20
200
140
Z40
400
280
Z60
600
420
Z80
800
Z100
1000
700
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
RMS Reverse Voltage
VR(RMS)
IO
35
560
V
A
Average Rectified Output Current (Note 1) @TA = 40°C
Average Rectified Output Current (Note 2) @TA = 40°C
0.8
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
30
A
I2t Rating for Fusing (t < 8.3ms)
I2
t
2s
A
5.0
1.0
Forward Voltage per element
@IF = 0.5A
VFM
IRM
Cj
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
5.0
500
µA
Typical Junction Capacitance per leg (Note 3)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
13
pF
RꢀJA
RꢀJL
70
20
°C/W
Tj, TSTG
-55 to +150
°C
Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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S1ZB05 - S1ZB100(THD)
1 of 2
Alldatasheet
Zibo Seno Electronic Engineering Co., Ltd.
S1ZB05 - S1ZB100(THD)
10
0.8
0.6
0.4
Al. Substrate PC Board
1.0
0.1
Glass Epoxy PC Board
0.2
0
Tj = 25°C
Pulse Width = 300µs
Resistive or Inductive Load
0.01
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
40
80
120
160
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per leg)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
35
30
Tj = 25°C
f = 1.0MHz
20
10
10
0
TA = 25°C
Single Half Sine-Wave
Pulse Width = 5.3ms
(JEDEC Method)
1
1
10
100
1.0
10
NUMBER OF CYCLES AT 60 Hz
VR, REVERSE VOLTAGE (V)
Fig. 3 Maximum Peak Forward Surge Current (per leg)
Fig. 4 Typical Junction Capacitance
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
g
ypical Reverse Characteristics (per element)
Fi . 5 T
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S1ZB05 - S1ZB100(THD)
2 of 2
Alldatasheet
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