KBJ35G [SENO]
3 5A GLASS PASSIVATED BRIDGE RECTIFIER;型号: | KBJ35G |
厂家: | Zibo Seno Electronic Engineering Co.,Ltd |
描述: | 3 5A GLASS PASSIVATED BRIDGE RECTIFIER |
文件: | 总2页 (文件大小:176K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
KBJ35A - KBJ35M
35A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500V
KBJ4
Min
RMS
Low Reverse Leakage Current
Dim
A
Max
25.20
15.30
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
24.80
14.70
P
B
N
A
K
Plastic Material - UL Flammability
Classification 94V-0
C
4.00 Nominal
H
D
17.20
0.90
7.30
17.80
1.10
7.70
·
Lead Free::For RoHS / Lead Free Version
E
C
B
D
L
G
H
_
Mechanical Data
3.10 Æ 3.40 Æ
·
·
Case: Molded Plastic
M
J
3.30
1.50
9.30
2.50
3.40
4.40
0.60
3.70
1.90
9.70
2.90
3.80
4.80
0.80
J
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
E
K
R
L
·
·
·
·
·
Polarity: Molded on Body
M
N
P
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
G
R
Marking: Type Number
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KBJ
35A
KBJ
35B
KBJ
35D
KBJ
35G
KBJ
35J
KBJ
35K
KBJ
35M
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
RMS Reverse Voltage
280
35
V
A
Average Forward Rectified Output Current @ TC = 110°C
IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
VFM
IR
350
A
V
Forward Voltage per element
@ IF = 17.5A
1.05
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA = 25°C
@ TC = 125°C
2.0
500
µA
I2t Rating for Fusing (t < 8.3 ms) (Note 1)
I2t
CT
240
60
A2s
pF
Typical Total Capacitance per Element (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
0.8
°C/W
°C
-55 to +150
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
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KBJ35A - KBJ35M
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Zibo Seno Electronic Engineering Co., Ltd.
KBJ35A - KBJ35M
100
40
30
20
Mounted on a
229 x 152 x 127 mm
AL finned plate
10
1.0
0.1
10
0
Tj = 25°C
Resistive or
Inductive load
0.01
100
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward. Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
Tj = 25°C
f = 1MHz
Single half-sine-wave
(JEDEC method)
400
Tj = 25°C
300
200
10
100
0
1
1
100
10
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
Fig. 4 Typical Total Capacitance, Per Element
1000
Tj = 125°C
Tj = 100°C
100
10
Tj = 50°C
Tj = 25°C
1.0
0.1
20
40
80
100
0
60
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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KBJ35A - KBJ35M
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