1N4002W [SENO]
1.0A SURFACE MOUNT GLASS PASSIVATED DIODE;
| 型号： | 1N4002W |
| 厂家： | 
Zibo Seno Electronic Engineering Co.,Ltd |
| 描述： | 1.0A SURFACE MOUNT GLASS PASSIVATED DIODE |
| 文件： | 总2页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zibo Seno Electronic Engineering Co., Ltd.
1N4001W – 1N4007W
1.0A SURFACE MOUNT GLASS PASSIVATED DIODE
Features
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Glass passivated device
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 2 5 A Peak
Low Power Loss
SOD - 123FL
Cathode Band
Top View
Ultra-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
2.8±0.1
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Mechanical Data
0.6±0.25
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Case: SOD-123FL, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
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3.7±0.2
Weight: 0.01 grams (approx.)
Lead Free: For RoHS / Lead Free Version
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
1N
1N
1N
1N
1N
1N
1N
Characteristic
Device marking code
Symbol
4001W 4002W 4003W 4004W 4005W 4006W 4007W
UNITS
A1
50
35
A2
100
70
A3
A4
A5
A6
800
560
A7
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
140
400
600
420
1000
800
V
RMS Reverse Voltage
VR(RMS)
IO
280
1.0
V
A
Average Rectified Output Current
@TL = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
25
A
1.3
V
Forward Voltage
@IF = 1.0A
VFM
IRM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
10
500
µA
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Cj
15
30
pF
°C/W
°C
RꢀJL
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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1N4001W-1N4007W
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Alldatasheet
Zibo Seno Electronic Engineering Co., Ltd.
1N4001W – 1N4007W
ꢀ ꢀ
1.0
0.8
0.6
0.4
0.2
0
10
1.0
0.1
Single phase half-wave
60 Hz resistive or inductive load
Tj = 25°C
Pulse width = 300 µs
0.01
100
25
50
75
100
125
150 175
200
0.6
0.8
1.0
1.2
1.4
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
20
Tj = 25°C
f = 1MHz
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
10
10
1
0
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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1N4001W-1N4007W
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Alldatasheet
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