JANTX1N6137US [SEMTECH]
Trans Voltage Suppressor Diode, 500W, 152V V(RWM), Unidirectional, 1 Element, Silicon;型号: | JANTX1N6137US |
厂家: | SEMTECH CORPORATION |
描述: | Trans Voltage Suppressor Diode, 500W, 152V V(RWM), Unidirectional, 1 Element, Silicon 局域网 二极管 |
文件: | 总20页 (文件大小:162K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 23 October 1999.
INCH-POUND
MIL-PRF-19500/516D
23 July 1999
SUPERSEDING
MIL-S-19500/516C
20 January 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE
SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,
1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,
1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,
1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification is approved for use within US Army Laboratory
Command, Department of the Army, and is available for use by all
Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient
voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.
1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:
P
=
2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at T = +25°C (see figure 5
R
R
A
for derating).
P
=
3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at T = +75°C for L = 0.375
L
inch (9.53 mm) (see figure 6).
P
PR
=
500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including
A and US suffix versions)) at t = 1 ms (see figure 7).
p
-55°C £ T
£ +175°C, -55°C £ T
£ +175°C (ambient temperatures).
STG
op
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,
Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
AMSC N/A
FSC 5961
Distribution Statement A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/516D
Dimensions
1N6102 through 1N6137
1N6102A through 1N6137A
Inches Millimeters
1N6138 through 1N6173
1N6138A through 1N 6173A
Ltr.
Inches
Min
Millimeters
Notes
3
Min
Max
.140
.185
.033
1.30
.030
Min
Max
3.56
4.70
0.84
33.02
0.76
Max
.185
.195
.042
1.30
.030
Min
Max
4.70
4.95
1.07
33.02
0.76
BD
BL
LD
LL
.085
.140
.026
1.00
2.16
3.56
0.66
25.4
.135
.140
.036
1.00
3.43
3.56
0.92
25.4
L1
4
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. Dimension L lead diameter uncontrolled in this area.
1
5. Symbol for internal construction of a bipolar transient suppressor.
FIGURE 1. Semiconductor device, diode, types 1N6102 through 1N6173
and 1N6102A through 1N6173A.
2
MIL-PRF-19500/516D
Dimensions
D-5B
D-5DC
1N6102US through 1N6137US,
1N6102AUS through 1N6137AUS
1N6138US through 1N6173US
1N6138AUS through 1N6173AUS
Ltr.
Inches
Max
Millimeters
Inches
Min
.183
.205
.019
.003
Millimeters
Notes
Min
.137
.200
.019
.003
Min
Max
3.76
5.72
0.71
Max
.202
.245
.028
Min
Max
5.13
6.22
0.71
BD
BL
ECT
S
.148
.225
.028
3.48
5.08
0.48
0.80
4.65
5.21
0.48
0.80
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. In accordance with ANSI Y14.5M, diameters are equivalent to f x symbology.
Minimum clearance of glass body to mounting surface on all orientations.
4
FIGURE 2. Semiconductor device, diode 1N6102US through 1N6173US, 1N6102AUS through 1N6173AUS.
3
MIL-PRF-19500/516D
A - version
Dimensions
Ltr
1N6103 through 1N6137
1N6103A through 1N6137A
Inches Millimeters
Min
1N6139 through 1N6173
1N6139A through 1N6173A
Millimeters Inches
Inches
Min
.124
.030
Millimeters
Max
.093
.040
Min
Max
2.36
1.02
Max
.130
.040
Min
3.15
0.76
Max
3.30
1.02
.087
.030
2.21
0.76
f A
B
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are for general information only.
3. Silver plate 250 microinches nominal on all surfaces of three discs.
FIGURE 3. Physical dimensions, JANHC and JANKC die (A-version), 1N6102
through 1N6173, 1N6102A through 1N6173A.
4
MIL-PRF-19500/516D
B - version
Dimensions
Ltr
1N6103 through 1N6137
1N6103A through 1N6137A
Inches Millimeters
Min
1N6139 through 1N6173
1N6139A through 1N6173A
Millimeters Inches
Inches
Min
.124
.110
Millimeters
Max
.093
.120
Min
Max
2.36
3.05
Max
.130
.120
Min
3.15
2.79
Max
3.30
3.05
.087
.110
2.21
2.79
f A
B
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are for general information only.
3. Silver thickness 120 microinches nominal on all discs.
FIGURE 4. Physical dimensions, JANHC and JANKC die (B-version), 1N6102
through 1N6173, 1N6102A through 1N6173A.
5
MIL-PRF-19500/516D
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not
include documents cited in other sections of this specification or recommended for additional information or as examples. While
every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified
requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this
document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of
the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see
6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
MILITARY
MIL-STD-750
- Semiconductor Devices, General Specification for.
-
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense
Automated Printing Service, Building 4D (NPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified
herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-
PRF-19500.
V
c
(max) .........Maximum clamping voltage. The maximum peak voltage appearing across the device when subjected to the
peak pulse current I .
P
I
...............Reverse breakdown current at the specified condition.
................Reverse peak pulse power.
(BR)
P
PR
a V
............Temperature coefficient of V
.
(BR)
(BR)
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified
in MIL-PRF-19500 and herein.
3.3.1 Metallurgical bond construction. Metallurgically bonded construction is required. The silicon die shall be metallurgically
bonded to both terminal pins. The silicon die attach material shall have a solidus point ³ +350°C (i.e., must exhibit some
mechanical strength up to +350°C).
3.3.2 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and as specified herein. Where a
choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.4.1 Marking of US version devices. For US version devices only, all marking (except polarity) may be omitted from the body,
but shall be retained on the initial container.
6
MIL-PRF-19500/516D
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, table I, and table II.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in tables I and II.
3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for
listing on the applicable qualified products list before contract award (see 4.2 and 6.4).
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein. A
separate qualification shall be required for the 500-watt and 1,500-watt peak pulse power device, respectively.
4.2.1 JANHC and JANKC die. JANHC and JANKC die shall be qualified in accordance with MIL-PRF-19500.
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and
as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of
table I herein shall not be acceptable.
Screen (see
table IV of MIL-
PRF-19500
Measurement
JANS level
JANTX and JANTXV levels
9
Not applicable
Not applicable
See 4.5.1
Not applicable
11
12
13
Not applicable
See 4.5.1
Interim electrical, delta, and group A, subgroup 2,
electrical parameters not applicable for this screen
(performed in screen 12).
Interim electrical, delta, and group A, subgroup 2,
electrical parameters not applicable for this screen
(performed in screen 12).
4.3.1 Screening (JANHC and JANKC die). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500.
As a minimum, die shall be 100-percent probed in accordance with group A, subgroup 2.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. A
separate quality conformance inspection shall be required for the 500-watt and 1,500-watt peak pulse power devices, respectively.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup
testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements
(end-points) and delta requirements shall be performed twice (once in each direction), in accordance with group A, subgroup 2.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method
B4
Condition
Not applicable.
B5
1027
T
= +100°C minimum (see 4.5.2 and 4.5.3)
A
7
MIL-PRF-19500/516D
4.4.2.1 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method
Condition
(See 4.5.1).
Not applicable.
B3
B5
B6
1027
Delta limits: DI
£ 100 percent of initial reading or 20 percent of column 5, whichever is greater;
£ 5 percent of initial value.
R1
DV
(BR)
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing
in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be performed twice (once in each
direction), in accordance with group A, subgroup 2.
Subgroup Method
Condition
C2
2036
lead tension: Test condition A, weight = 5 pounds, t = 15 ± 3 £. Lead fatigue: Test condition E,
weight = 2 pounds (Not applicable to "US" suffix devices).
C6
C7
1026
4071
1 ms pulse only (see 4.5.1 and 4.5.3).
I
= column 3 of table II, T = +25°C ± 3°C, T = T +100°C; sampling plan shall be 45
(BR)
devices, c = 0; a V
1
2
1
= column 8 of table II.
(BR)
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Power burn-in and steady-state operation life test conditions. For the purposes of this test, the direction in which the device
is first pulsed shall be considered polarity A and the reverse direction polarity B. The test conditions and order of events shall be as
follows:
a. Pulse in accordance with 4.5.3, in polarity A 5 times (screening and group B) and 50 times (group C) at T = +25°C.
A
b. Pulse in accordance with 4.5.3, in polarity B 5 times (screening and group B) and 50 times (group C) at T = +25°C.
A
c. Read and record I
failures.
and V in polarities A and B at T = +25°C, remove defective devices and record number of
(BR)1 A
R1
d. Apply the working peak reverse voltage (V
) (column 4 of table II) in polarity A at T = +125°C as follows:
A
RWM
(1)
(2)
48 hours (JANTX and JANTXV) and 120 hours (JANS) for the screening test.
170 hours (JAN, JANTX, and JANTXV) for group B steady-state operation life test.
500 hours for group C steady-state operation life test.
(3)
e. Read I
in polarity A at T = +25°C. Devices with DI > 50 percent (100 percent for steady-state operation life) of the
R1
R1
A
initial reading or 20 percent of column 5, table II, whichever is greater, shall be considered defective. Remove defective
devices and record the number of failures.
f.
Apply the working peak pulse reverse voltage (V
) (column 4 of table II in polarity B at T = +125°C as follows:
A
RWM
(1)
(2)
(3)
48 hours (JANTX and JANTXV) and 120 hours (JANS) for the screening test.
170 hours (JAN, JANTX, and JANTXV) for group B steady-state operation life test.
500 hours for group C steady-state operation life test.
g. Read I
R1
in polarity B at T = +25°C. Devices with DI > 50 percent (100 percent for steady-state operation life) of the
R1
A
initial reading or 20 percent of column 5, table II, whichever is greater, shall be considered defective. Remove defective
devices and record the number of failures.
8
MIL-PRF-19500/516D
4.5.1 Power burn-in and steady-state operation life test conditions - continued.
h. Read V
in polarities A and B at T = +25°C. Devices with DV
> ±2 percent (±5 percent for steady-state
BR1
(BR)1
A
operation life) of the initial reading shall be considered defective. Remove defective devices and record the number of
failures.
i.
Read I in polarity A at T = +25°C, remove defective devices and record the number of failures.
R1 A
4.5.1.1 Group C steady-state operation life test (alternate procedure). When the group B 340-hour life test is continued on test to
1,000 hours to satisfy the group C life test requirements, the test shall be performed as given in 4.5.1 with the following exceptions:
a. 4.5.1 steps a and b shall be moved and performed following step g.
b. 4.5.1 steps e and g shall be repeated after steps a and b are performed and before step h is completed (step i may be
omitted when this procedure is used).
4.5.2 Accelerated steady-state operation life. This test shall be conducted with the devices subjected to the breakdown current
specified in column 3 of table II in opposite polarities for 48 +8, -4 hours in each polarity. At the beginning of the test and at the end
of each time period, the devices shall be temperature stabilized at T = +25°C and subjected to pulse conditions at the rate of one
A
pulse per minute (max) for 10 pulses each in accordance with 4.5.3 as specified.
4.5.3 Maximum peak pulse current (I ). The peak pulse currents specified in column 7 of table II shall be applied simultaneously
P
maintaining a bias voltage, not less than the applicable voltage in column 4 of table II, in the same polarity as the peak pulse
current. The peak pulse current shall be applied with a current versus time waveform (1 pulse per minute maximum) such that the
pulse current shall reach 100 percent of I at t £ 10 ms and decay to 50 percent of I at t ³ 1 ms for t = 1 ms (see figure 8).
P
P
p
NOTE: Tolerance on time (t) shall be -0 +10 percent.
4.5.4 Clamping voltage. The peak pulse clamping voltage shall be measured across the diode in a 1 ms time interval. The
response detector shall demonstrate equipment accuracy of ±3 percent.
4.5.5 Lot accumulation. Lot accumulation period shall be six months in lieu of six weeks
9
MIL-PRF-19500/516D
TABLE I. Group A inspection .
Inspection
1/
MIL-STD-750
Conditions
Limit
Unit
Symbol
Method
2071
Min
Max
Subgroup 1
Visual and mechanical
examination
Subgroup 2 2/
Reverse current
leakage
4016
4022
DC method, V = V
RWM
(column 4 of table II herein.)
Column
5 of table
II
mA dc
R
I
R1
Breakdown voltage
Column 2
of table II
V dc
t
I
£ 300 ms, duty cycle £ 2 percent
V
(BR)1
p
= column 3 of table II
(BR)
Subgroup 3 2/
High temperature
operation
T
= +150°C
A
Reverse current
leakage
4016
DC method, V = V
RWM
(column 4 of table II herein.)
Column
9 of table
II
mA dc
R
I
R2
Subgroup 4 2/
Clamping voltage
maximum (pulsed)
t
= 1 ms (see 4.5.3 and 4.5.4), I
=
p
Column
6 of table
II
V (pk)
V
p
C(MAX)
column 7 of table II.
Subgroups 5 and 6
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
2/ All electrical testing shall be performed twice, once in each direction.
10
TABLE II. Electrical characteristics for 500 W and 1,500 W series diodes (limits apply in both directions).
Column 1
Series type
Column 2
Breakdown
voltage
Column 3
Test
current
Column 4
Working
peak
reverse
voltage
Column 5
Maximum
reverse current
Column 6
Maximum
clamping
voltage
Column 7
Maximum peak pulse
Column 8
Maximum
temp. Coeff. of
Column 9
Maximum reverse
current at
current I
P
V
(BR)1
at
I
1/
I
V
(BR)
T
= +150°C
(BR)
R1
A
V
(max) at I
I
C
p
a V
(BR)
1/
I
(BR) 1/
R2
V
RWM
V dc
1/
t
= 1 ms 1/
V (PK)
p
500 W
1N6102
1,500 W
1N6138
Min V dc
mA dc
500 W 2/
A (PK)
1,500 W 3/
A (PK)
500 W 2/
mA dc
4,000
4,000
750
750
500
500
300
1,500 W
3/ mA dc
12,000
12,000
3,000
3,000
2,000
2,000
1,200
1,200
800
mA dc
2/
mA dc
3/
%/°C
6.12
6.46
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.45
10.80
11.40
175
175
175
175
150
150
150
150
125
125
125
125
100
100
5.2
5.2
5.7
5.7
6.2
6.2
6.9
6.9
7.6
7.6
8.4
8.4
9.1
9.1
100
100
50
50
20
20
20
20
20
500
500
300
300
100
100
100
100
100
100
20
11.0
10.5
11.8
11.2
12.7
12.1
14.0
13.4
15.2
14.5
16.3
15.6
17.7
16.9
45.4
47.6
42.4
44.6
39.4
41.3
35.7
37.3
32.9
34.5
30.7
32.0
28.2
29.6
136.4
142.8
127.1
133.9
118.1
124.0
107.1
111.9
98.7
103.4
92.0
96.2
84.7
88.8
.05
.05
.06
.06
.06
.06
.06
.06
.07
.07
.07
.07
.07
.07
1N6102A 1N6138A
1N6103 1N6139
1N6103A 1N6139A
1N6104 1N6140
1N6104A 1N6140A
1N6105 1N6141
1N6105A 1N6141A
1N6106 1N6142
1N6106A 1N6142A
1N6107 1N6143
1N6107A 1N6143A
1N6108 1N6144
1N6108A 1N6144A
300
200
20
20
200
800
200
800
20
20
200
800
20
20
150
600
20
20
150
600
1N6109
1N6145
11.70
12.35
100
100
9.9
9.9
20
20
20
20
19.0
18.2
26.3
27.5
78.9
82.4
.08
.08
150
150
600
600
1N6109A 1N6145A
1N6110 1N6146
1N6110A 1N6146A
1N6111 1N6147
1N6111A 1N6147A
1N6112 1N6148
1N6112A 1N6148A
1N6113 1N6149
1N6113A 1N6149A
1N6114 1N6150
1N6114A 1N6150A
1N6115 1N6151
1N6115A 1N6151A
1N6116 1N6152
1N6116A 1N6152A
13.50
14.25
14.40
15.20
16.20
17.10
18.00
19.00
19.8
20.9
21.6
22.8
24.3
75
75
75
75
65
65
65
65
50
50
50
50
50
50
11.4
11.4
12.2
12.2
13.7
13.7
15.2
15.2
16.7
16.7
18.2
18.2
20.6
20.6
20
20
20
20
1
1
1
1
1
1
1
1
1
20
20
20
20
10
10
5
5
5
5
5
21.9
21.0
23.4
22.3
26.3
25.1
29.0
27.7
31.9
30.5
34.8
33.3
39.2
37.4
22.8
23.8
21.4
22.4
19.0
19.9
17.2
18.0
15.7
16.4
14.4
15.0
12.8
13.4
68.5
71.4
64.1
67.3
57.0
59.8
51.7
54.2
47.0
49.2
43.1
45.0
38.3
40.1
.08
.08
.08
100
100
100
100
100
100
100
100
100
100
100
100
100
100
400
400
400
400
400
400
400
400
400
400
400
400
400
400
.08
.085
.085
.085
.085
.085
.085
.09
.09
.09
.09
5
5
5
25.7
1
See footnotes at end of table.
TABLE II. Electrical characteristics for 500 W and 1,500 W series diodes (limits apply in both directions).
Column 1
Column 2
Column
3
Column 4
Column 5
Column 6
Column 7
Column 8
Column 9
Series type
Breakdown
voltage
Test
current
Working
peak
reverse
voltage
Maximum
reverse current
Maximum
clamping
voltage
Maximum peak pulse
Maximum
temp. Coeff. of
Maximum reverse
current at
current I
P
V
(BR)1
at
I
1/
I
V
(BR)
T
= +150°C
(BR)
R1
A
V
(max) at I
I
C
p
a V
(BR)
1/
I
(BR) 1/
R2
V
RWM
V dc
1/
t
= 1 ms 1/
V (PK)
p
500 W
1N6117
1,500 W
1N6153
Min V dc
mA dc
500 W 2/
A (PK)
1,500 W 3/
A (PK)
500 W 2/
mA dc
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
1,500 W
3/ mA dc
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
400
mA dc
2/
1
mA dc
3/
5
%/°C
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
104.5
40
40
40
40
30
30
30
30
30
30
25
25
25
25
20
20
20
20
20
20
20
20
15
15
15
15
12
12
12
12
22.8
22.8
25.1
25.1
27.4
27.4
29.7
29.7
32.7
32.7
35.8
35.8
38.8
38.8
42.6
42.6
47.1
47.1
51.7
51.7
56.0
56.0
62.2
62.2
69.2
69.2
76.0
76.0
83.6
83.6
43.6
41.6
47.9
45.7
52.3
49.9
56.2
53.6
62.0
59.1
67.7
64.6
73.5
70.1
80.7
77.0
89.3
85.3
98.0
97.1
108.1
103.1
118.2
112.8
131.1
125.1
144.1
137.6
158.5
151.3
11.5
12.0
10.4
10.9
9.6
10.0
8.9
9.3
8.1
8.5
7.4
7.7
6.8
7.1
6.2
6.5
5.6
5.9
5.1
5.1
4.6
4.8
4.2
4.4
3.8
4.0
3.5
3.6
3.2
3.3
34.4
36.0
31.3
32.8
28.7
30.1
26.7
28.0
24.2
25.4
22.2
23.2
20.4
21.4
18.6
19.5
16.8
17.6
15.3
15.4
13.9
14.5
12.7
13.3
11.4
12.0
10.4
10.9
9.5
.09
.09
1N6117A 1N6153A
1N6118 1N6154
1N6118A 1N6154A
1N6119 1N6155
1N6119A 1N6155A
1N6120 1N6156
1N6120A 1N6156A
1N6121 1N6157
1N6121A 1N6157A
1N6122 1N6158
1N6122A 1N6158A
1N6123 1N6159
1N6123A 1N6159A
1N6124 1N6160
1N6124A 1N6160A
1N6125 1N6161
1N6125A 1N6161A
1N6126 1N6162
1N6126A 1N6162A
1N6127 1N6163
1N6127A 1N6163A
1N6128 1N6164
1N6128A 1N6164A
1N6129 1N6165
1N6129A 1N6165A
1N6130 1N6166
1N6130A 1N6166A
1N6131 1N6167
1N6131A 1N6167A
1
5
1
5
.095
.095
.095
.095
.095
.095
.095
.095
.095
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
9.9
See footnotes at end of table.
TABLE II. Electrical characteristics for 500 W and 1,500 W series diodes (limits apply in both directions).
Column 1
Series type
Column 2
Breakdown
voltage
Column 3
Test
current
Column 4
Working
peak
reverse
voltage
Column 5
Maximum
reverse current
Column 6
Maximum
clamping
voltage
Column 7
Maximum peak pulse
Column 8
Maximum
temp. Coeff. of
Column 9
Maximum reverse
current at
current I
P
V
(BR)1
at
I
1/
I
V
(BR)
T
= +150°C
(BR)
R1
A
V
(max) at I
C
p
I
a V
(BR)
1/
I
(BR) 1/
R2
V
RWM
V dc
1/
t
= 1 ms 1/
V (PK)
p
500 W
1N6132
1,500 W
1N6168
Min V dc
mA dc
500 W 2/
A (PK)
2.9
1,500 W 3/
A (PK)
8.7
500 W 2/
mA dc
100
1,500 W
3/ mA dc
400
mA dc
mA dc
%/°C
2/
1
1
1
1
1
1
1
1
1
1
1
1
3/
5
5
5
5
5
5
5
5
5
5
5
5
108.0
114.0
117.0
123.5
135.0
142.5
144
152
162
171
180
10
10
10
10
8
8
8
8
5
91.2
91.2
98.8
172.9
165.1
187.3
178.8
216.2
206.3
228.8
218.4
257.4
245.7
286.0
273.0
.100
.100
.105
.105
.105
.105
.105
.105
.110
.110
.110
.110
1N6132A 1N6168A
1N6133 1N6169
1N6133A 1N6169A
1N6134 1N6170
1N6134A 1N6170A
1N6135 1N6171
1N6135A 1N6171A
1N6136 1N6172
1N6136A 1N6172A
1N6137 1N6173
1N6137A 1N6173A
3.0
2.7
2.8
2.3
2.4
2.2
2.3
1.9
9.1
8.0
8.4
6.9
7.3
6.6
6.9
5.8
100
400
100
400
98.8
100
400
114.0
114.0
121.6
121.6
136.8
136.8
152.0
152.0
100
400
100
400
100
400
100
400
100
400
5
5
5
2.0
1.7
1.8
6.1
5.2
5.5
100
400
100
400
190
100
400
1/ Applies to both 500 W and 1,500 W series.
2/ Applies to only 500 W series.
3/ Applies to only 1,500 W series.
MIL-PRF-19500/516D
FIGURE 5. Steady-state derating curve for free-air mounting (not applicable to JANHC/JANKC die).
14
MIL-PRF-19500/516D
L
L
R
R
QJL
QJL
Inches
mm
C/W
Inches
mm
C/W
0.000
0.125
0.250
0.375
0.500
0.750
(0.00)
(3.17)
(6.35)
(9.53)
(12.70)
(19.05)
8.3
0.000
0.125
0.250
0.375
0.500
0.750
(0.00)
(3.17)
(6.35)
(9.53)
(12.70)
(19.05)
5
17.5
26.5
33.5
42.0
55.0
10
15
20
25
33
FIGURE 6. Maximum power versus lead temperature (not applicable to JANHC/JANKC die).
15
MIL-PRF-19500/516D
FIGURE 7. Peak pulse power versus pulse time.
FIGURE 8. Pulse waveform.
16
MIL-PRF-19500/516D
The pulse derating curve of maximum peak pulse power versus junction temperature has been included for reference purposes
only.
FIGURE 9. Pulse derating curve (not applicable to JANHC/JANKC die)
17
MIL-PRF-19500/516D
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2).
When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible
packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control
Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command.
Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-
ROM products, or by contacting the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see
2.2.1).
b. Lead finish (see 3.3.2).
c. For die acquisition, the JANC letter version should be specified (see figures 3 and 4).
d. Product assurance level and type designation.
e. Packaging requirements (see 5.1).
6.3 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example,
JANHCA1N6102) will be identified on the QPL.
JANHC and JANKC ordering information 1/
PIN
Manufacturer CAGE
14099
14552
2/
2/
1N6102
through
1N6137
JANHCA1N6102
through
JANHCA1N6137
JANHCB1N6102
through
JANHCB1N6137
1N6138
through
1N6173
JANHCA1N6138
through
JANHCA1N6173
JANHCB1N6138
through
JANHCB1N6173
1/ Applies to "A" suffix versions also.
2/ For JANKC level, replace "JANHC" prefix with "JANKC"
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually
been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange
to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible
to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of
products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
18
MIL-PRF-19500/516D
6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extent of the changes.
CONCLUDING MATERIAL
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2175)
19
MIL-PRF-19500/516D
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/516D
2. DOCUMENT DATE
99/07/23
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,
TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH
1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US,
1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
Commercial
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan_barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC -LM)
8725 John J. Kingman Road, Suite 2533
Columbus, OH 43216-5000
Fort Belvior, Virginia 22060-6221
Telephone (703) 767-6888 DSN 427-6888
DD FORM 1426, FEB 99 (EG)
PREVIOUS EDITIONS ARE OBSOLETE
20
WHS/DIOR, Feb 99
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