BD139T [SEMTECH]

NPN Silicon Epitaxial Power Transistor; NPN硅外延功率晶体管
BD139T
型号: BD139T
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

NPN Silicon Epitaxial Power Transistor
NPN硅外延功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:217K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BD135T / BD137T / BD139T  
NPN SILICON EPITAXIAL POWER  
TRANSISTOR  
These devices are designed as Audio Amplifier  
and Drivers Utilizing.  
E
C
B
TO-126 Plastic Package  
O
Absolute Maximum Ratings (Ta=25 C)  
Value  
Parameter  
Symbol  
Unit  
BD135T BD137T BD139T  
Collector Emitter Voltage  
Collector Emitter Voltage ( RBE = 1 K)  
Collector Base Voltage  
VCEO  
VCER  
VCBO  
VEBO  
45  
45  
45  
60  
60  
60  
5
80  
V
V
V
V
100  
100  
Emitter Base Voltage  
Collector Current - Continuous  
Collector Current - Peak 1)  
IC  
ICM  
1.5  
2
A
Base Current - Continuous  
IB  
0.5  
A
O
Total Power Dissipation @ TA=25 C  
Derate above 25 C  
1.25  
10  
W
mW/ C  
PD  
O
O
O
Total Power Dissipation @ TC=25 C  
Derate above 25 C  
12.5  
100  
W
mW/ C  
PD  
O
O
O
Total Power Dissipation @ TC=70 C  
PD  
8
-55 to +150  
100  
W
O
C
Operating and Storage Junction Temperature Range  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
TJ, Ts  
O
Rθ  
C/W  
JA  
O
Rθ  
10  
C/W  
JC  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 22/03/2006  
BD135T / BD137T / BD139T  
O
Characteristics at Ta=25 C  
Parameter  
DC Current Gain  
Symbol  
Min.  
Max.  
Unit  
at VCE = 2 V, IC = 5 mA  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
25  
25  
-
-
-
-
-
-
-
at VCE = 2 V, IC = 500 mA  
at VCE = 2 V, IC = 150 mA  
-
-6  
40  
100  
160  
250  
400  
-10  
-16  
-25  
63  
100  
160  
Collector Emitter Sustaining Voltage  
at IC = 30 mA  
BD135T  
BD137T  
BD139T  
VCEO(sus)  
VCEO(sus)  
VCEO(sus)  
45  
60  
80  
-
-
-
V
V
V
at IC=10mA  
Collector Cutoff Current  
at VCB = 30 V  
ICBO  
-
-
-
-
0.1  
10  
0.5  
1
µA  
µA  
V
Emitter Cutoff Current  
at VEB = 5 V  
IEBO  
Collector Emitter Saturation Voltage  
at IC = 500 mA, IB = 50 mA  
Base Emitter On Voltage  
at IC = 500 mA, VCE = 2 V  
VCE(sat)  
VBE(on)  
V
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 22/03/2006  

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