BC859 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | BC859 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总6页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC859
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups A, B
and C, according to its DC current gain.
As complementary type the NPN transistor BC849 is
recommended.
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta=25 C)
Symbol
-VCBO
-VCEO
-VCES
-VEBO
-IC
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
30
30
V
30
V
5
V
Collector Current
100
mA
mA
mA
mA
mW
Peak Collector Current
-ICM
200
Peak Base Current
-IBM
200
Peak Emitter Current
IEM
200
Power Dissipation
Ptot
200
O
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
RθJA
RθSB
TJ
450
C/W
O
320
C/W
O
C
150
O
C
Storage Temperature Range
TS
-65 to +150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859
O
Characteristics at Ta =25 C
Symbol
Min.
Typ.
Max.
Unit
h-Parameters at -VCE=5V, -IC=2mA, f=1KHz
Current Gain
Current Gain Group
A
B
C
hfe
hfe
hfe
-
-
-
220
330
600
-
-
-
-
-
-
Input Impedance
Output Admittance
Current Gain Group A
hie
hie
hie
1.6
3.2
6.0
2.7
4.5
8.7
4.5
8.5
15
KΩ
KΩ
KΩ
B
C
Current Gain Group
A
B
C
hoe
hoe
hoe
-
-
-
18
30
60
30
60
µS
µS
µS
110
A
B
C
hre
hre
hre
-
-
-
1.5 . 10-4
2 . 10-4
3 . 10-4
-
-
-
-
-
-
Reverse VoltageTransfer Ratio Current Gain Group
DC Current Gain
A
B
C
hFE
hFE
hFE
110
200
420
-
-
-
220
450
800
-
-
-
Current Gain Group
at -VCE=5V, -IC=2mA
Collector–Emitter Saturation Voltage
at -IC=10mA, -IB=0.5mA
-
-
-VCEsat
-VCEsat
-
-
300
650
mV
mV
at -IC=100mA, -IB=5mA
Base-Emitter On Voltage
at -IC=2mA, -VCE=5V
at -IC=10mA, -VCE=5V
-VBE(on)
-VBE(on)
600
-
-
-
750
820
mV
mV
Collector Cutoff Current
at -VCB=30V
-ICBO
-ICBO
-
-
-
-
15
5
nA
µA
O
at -VCB=30V, TJ=150 C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859
O
Characteristics at Tamb=25 C
Symbol
fT
Min.
Typ.
150
-
Max.
Unit
MHz
pF
Gain Bandwidth Product
at -VCE=5V, -IC=10mA, f=100MHz
-
-
-
Collector Base Capacitance
at -VCB=10V, f=1.0MHz
CCBO
6
Noise Figure
at -IC=200µA, -VCE=5V, RG=2KΩ, f=1.0kHz, Δf=200Hz
at -IC=200µA, -VCE=5V, RG=2KΩ, f=30...15000Hz
F
F
-
-
-
-
4
4
dB
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859
Admissible power dissipation
Collector current
versus temperature of substrate backside
versus base emitter voltage
mW
mA
102
500
400
300
200
100
0
-VCE=5V
Tamb=25oC
5
4
3
2
10
Ptot
-IC
5
4
3
2
1
5
4
3
2
10-1
200 oC
TSB
0
1 V
0.5
0
100
-VBE
Gain bandwidth product
versus collector current
Pulse thermal resistance
versus pulse duration (normalized)
MHz
103
10
Tamb=25oC
7
0.5
5
4
3
2
5
4
0.2
3
0.1
10-1
-VCE=10V
2
rthSB
RthSB
0.05
fT
5
4
3
2
5V
2V
102
0.02
0.01
7
10-2
5
4
5-3
5
4
3
2
tp
v=
3
tp
T
PI
v=0
2
10-3
T
10
0.1
10-7 10-6
-1 1s
-2 10
10-5 10-4 10-3 10
5 10
2
5
2
2
5
100mA
1
tp
-IC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859
DC current gain
versus collector current
Collector saturation voltage
versus collector current
V
0.5
103
-VCE=5V
100oC
-IC/-IB=20
5
4
3
0.4
2
102
-50oC
-VCEsat 0.3
hFE
5
4
3
2
0.2
0.1
0
Tamb=100oC
10
25oC
5
4
3
-50oC
2
1
2
10-1
1
10 mA
2
5
2
5 10 2
5
102mA
-IC
10-2
10-1
10
1
-IC
Noise figure
Noise figure
versus collector current
versus collector emitter voltage
dB
20
dB
20
-IC=0.2mA
RG=2K
-VCE=5V
f=1KHz
18
16
Tamb=25oC
18
16
f=1KHz
Tamb=25o C
100K
500
14
F
14
12
F
10K
RG=1M
12
10
8
10
8
1K
6
6
500
4
4
2
0
2
0
10-2
1
10-1
10-3
2
10-1
10 mA
-IC
2
5
2
5 10 2
5
10 V
1
-VCE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859
Collector-Base cutoff current
versus ambient temperature
Collector-base capacitance,
Emitter-base capacitance
versus reverse bias voltage
nA
pF
4
20
10
10
10
Tamb=25oC
18
16
3
2
14
CCBO
CEBO
12
10
-ICBO
CEBO
10
1
8
6
CCBO
4
2
0
Test voltage -VCBO:
equal to the given
maximum value -VCEO
typical
maximum
-1
10
o
2
5
2
5
0
200 C
100
0.1
1
10V
Tj
-VCBO,-VEBO
Noise figure
versus collector current
Relative h-parameters
versus collector current
dB
2
20
18
16
10
-VCE=5V
f=120Hz
6
4
Tamb=25o C
100K
10K 1K
RG=1M
500
2
14
12
F
hie
10
he(-IC)
he(-IC=2mA)
6
4
10
8
2
hre
hfe
6
1
6
4
4
2
0
2
-VC
Tam
b=2
E=5
V
5 C
hoe
o
-1
10
-2
-1
-3
10
1
10
10
10 mA
-IC
-1
4
1
10
10mA
2
2
4
-IC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
相关型号：
BC859-A
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
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