BC517 [SEMTECH]
NPN Silicon Darlington Transistor; NPN硅达林顿晶体管
| 型号： | BC517 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Darlington Transistor |
| 文件： | 总1页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC517
NPN Silicon Darlington Transistor
Collector
Base
Emitter
TO-92 Plastic Package
Weight approx. 0.19g
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
VCBO
VCES
VEBO
IC
Value
Unit
V
40
30
10
V
V
Collector Current
500
mA
mW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Ptot
625
O
C
Tj
150
O
C
TS
- 55 to + 150
O
Characteristics (Ta = 25 C)
Parameter
Symbol
Min.
Typ.
-
Max.
-
Unit
DC Current Gain
hFE
VCEsat
VBE(on)
V(BR)CBO
V(BR)CES
V(BR)EBO
ICES
30,000
-
V
at VCE = 2 V, IC = 20 mA
Collector Saturation Voltage
at IC = 100 mA, IB = 0.1 mA
-
-
-
1
1.4
-
Base Emitter On Voltage
at VCE = 5 V, IC = 10 mA
Collector Base Breakdown Voltage
at IC = 100 µA
-
V
40
30
10
-
-
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
-
-
V
Collector Cutoff Current
at VCE = 30 V
-
500
100
100
-
nA
nA
nA
MHz
Collector Cutoff Current
at VCB = 30 V
ICBO
-
-
-
Emitter Cutoff Current
at VEB = 10 V
IEBO
-
Current-Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
-
200
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :15/06/2006
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