1SS510WT [SEMTECH]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | 1SS510WT |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总1页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 2SB772T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
E
C
B
TO-126 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Collector Base Voltage
Symbol
-VCBO
-VCEO
-VEBO
Value
40
Unit
V
Collector Emitter Voltage
Emitter Base Voltage
30
V
5
V
Collector Current - DC
Collector Current - Pulse 1)
-IC
-IC
3
7
A
A
Base Current - DC
-IB
0.6
A
O
PD
PD
10
1.0
W
W
Total Power Dissipation @ TC = 25 C
O
Total Power Dissipation @ TA = 25 C
O
C
Operating and Storage Junction Temperature Range
TJ, Ts
- 65 to + 150
1) PW=10ms, Duty Cycle ≤ 50%
O
Characteristics at Ta = 25 C
Parameter
Symbol
hFE
hFE
hFE
hFE
hFE
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
at -VCE = 2 V, -IC = 1 A
30
60
100
160
200
-
-
-
-
-
-
-
-
-
-
-
R
Q
P
E
120
200
320
400
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
-V(BR)CBO
-V(BR)EBO
-ICBO
30
40
5
-
-
-
-
-
-
-
V
V
Collector Base Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 1 mA
-
V
Collector Cutoff Current
at -VCB = 30 V
-
1
1
µA
µA
Emitter Cutoff Current
at -VEB = 3 V
-IEBO
-
Collector Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
-VCE(sat)
-VBE(sat)
CO
-
-
-
-
-
0.5
2
V
V
Base Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Output Capacitance
55
-
pF
at -VCB = 10 V, f = 1 MHz
Current Gain Bandwidth Product
at -IC = 100 mA, -VCE = 5 V
fT
-
80
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/05/2006
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