1SS392 [SEMTECH]
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE; 硅外延肖特基二极管
| 型号： | 1SS392 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SS392
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low voltage high speed switching application
3
Features
• Low forward voltage
• Low reverse current
1
2
Marking Code: "ZD"
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Symbol
VRM
VR
Value
Unit
45
V
V
40
Average Forward Current
100
mA
mA
A
IO
Maximum Peak Forward Current
Non-Repetitive Peak Forward Surge Current ( t = 10 ms)
Power Dissipation
300
IFM
1
150
IFSM
Pd
mW
O
C
Junction Temperature
125
Tj
O
C
Storage Temperature Range
- 55 to + 125
Tstg
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Min.
Max.
Unit
Forward Voltage
at IF = 100 mA
-
-
0.6
5
V
Reverse Current
at VR = 40 V
IR
µA
Reverse Breakdown Voltage
at IR = 10 µA
V(BR)R
CT
45
-
-
V
Total Capacitance
at VR = 0 , f = 1 MHz
25
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
1SS392
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
相关型号：
©2020 ICPDF网 联系我们和版权申明