1SS315 [SEMTECH]
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE; 硅外延肖特基二极管型号: | 1SS315 |
厂家: | SEMTECH CORPORATION |
描述: | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
文件: | 总3页 (文件大小:172K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1SS315
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Applications
• UHF Band Mixer
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
ST
Top View
Marking Code: "ST"
Simplified outline SOD-323 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VRM
IF
Value
Unit
V
Peak Reverse Voltage
5
30
Forward Current
mA
O
C
Junction Temperature
TJ
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
O
Electrical Characteristics at Ta = 25 C
Parameter
Symbol
IF
Min.
30
Typ.
-
Max.
-
Unit
Forward Current
at VF = 0.5 V
mA
µA
pF
Reverse Current
at VR = 0.5 V
IR
-
-
-
25
-
Total Capacitance
CT
0.6
at VR = 0.2 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
1SS315
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
1SS315
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
A
D
E
bp
UNIT
mm
A
bp
C
D
E
HE
1.10
0.80
2.80
2.30
0.40
0.25
1.35
1.15
0.15
0.00
1.80
1.60
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
相关型号:
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