1SS294 [SEMTECH]
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE; 硅外延平面肖特基势垒二极管
| 型号： | 1SS294 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SS294
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
3
• Low reverse current
• Low forward voltage
Marking Code: "XM"
SOT-23 Plastic Package
1
2
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Symbol
Value
Unit
45
40
V
V
VRM
VR
IO
Average Forward Current
Maximum Peak Forward Current
Power Disspation
100
mA
mA
mW
300
IFM
PD
Tj
150
O
C
Junction Temperature
125
O
C
Storage Temperature Range
- 55 to + 125
Tstg
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Max.
0.6
Unit
V
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 40 V
IR
5
µA
pF
Total Capacitance
at VR = 0 V, f = 1 MHz
CT
25
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007
1SS294
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007
相关型号：
1SS295
Small Delat forward voltage:AVF = 10 mV(Max)Small Delat total capacitance:ACT = 0.1pF(Max)
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