1N5553US [SEMTECH]

Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode; 表面贴装气密密封标准恢复整流二极管
1N5553US
型号: 1N5553US
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode
表面贴装气密密封标准恢复整流二极管

整流二极管
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中文:  中文翻译
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1N5550US THRU 1N5554US  
Surface Mount Hermetically Sealed  
Standard Recovery Rectifier Diode  
POWER DISCRETES  
Description  
Features  
Quick reference data  
u Low reverse leakage current  
u Hermetically sealed in fused metal oxide  
u Good thermal shock resistance  
u Low forward voltage drop  
VR = 200 - 1000V  
IF  
5.0A  
=
trr = 2µS  
VF = 1.0V  
u Avalanche capability  
These products are qualified to MIL-PRF-19500/420.  
They can be supplied fully released as JAN, JANTX,  
and JANTXV versions.  
Absolute Maximum Ratings  
Electrical specifications @ TA = 25°C unless otherwise specified.  
1N5550US 1N5551US 1N5552US 1N5553US 1N5554US  
Symbol  
Units  
Working Reverse Voltage  
VRWM  
200  
400  
600  
5.0  
800  
1000  
V
Average Forward Current  
@55 °C in free air, lead length  
0.375"  
IF(AV)  
A
A
Repetitive Surge Current  
@55 °C in free air, lead length  
0.375"  
IFRM  
25  
Non-Repetitive Surge Current  
(tp = 8.3mS @ VR & TJMAX  
(tp = 8.3mS, @ VR& 25 °C)  
)
IFSM  
100  
150  
A
Storage Temperature Range  
TSTG  
-65 to +175  
°C  
Revision: August 22nd, 2011  
1
www.semtech.com  
1N5550US THRU 1N5554US  
POWER DISCRETES  
Electrical Specifications  
Symbol 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US Units  
Average Forward Current (sine wave)  
- max. TA = 55 °C  
- max. L = 3/8"; TL = 55 °C  
IF(AV)  
IF(AV)  
3.0  
5.0  
A
A2S  
V
I2t for fusing (t = 8.3mS) max  
I2t  
42  
Forward Voltage Drop max.  
@ IF = 3.0A, T= 25 °C  
V F  
1.0  
j
Reverse Current max.  
@ VRWM, Tj = 25°C  
@ VRWM, Tj = 125°C  
IR  
IR  
1.0  
60  
µA  
Reverse Recovery Time max.  
0.5A IF to 1.0A IRM recovers to 0.25A IRM(REC)  
trr  
Cj  
2.0  
92  
µS  
pF  
Junction Capacitance typ.  
@ VR = 5V, f = 1MHz  
Thermal Characteristics  
Symbol 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US Units  
RØJEC  
RØJEC at  
L= 0  
inch  
6.5  
C/W  
Typical Characteristics  
Fig 1. Typical junction capacitance as a function of reverse voltage.  
www.semtech.com  
2011 Semtech Corp.  
2
1N5550US THRU 1N5554US  
POWER DISCRETES  
Typical Characteristics  
Fig 2. Forward voltage drop as a function of forward current  
Fig 3. Maximum power versus lead temperature  
Fig 4. Forward power dissipation as a function of forward  
current, for sinusoidal operation.  
Fig 5. Maximum ratings for capacitive loads.  
www.semtech.com  
2011 Semtech Corp.  
3
1N5550US THRU 1N5554US  
POWER DISCRETES  
Ordering Information  
Part Number  
Description  
1N5550US  
1N5551US  
1N5552US  
1N5553US  
1N5554US  
Surface Mount hermetically sealed(1)  
Note:  
(1) Available in bulk and tape and reel packaging. Please  
consult factory for quantities.  
Outline Drawing  
Dimensions  
B
Inches  
MIN  
Millimeters  
Note  
DIMN  
MAX  
0.275  
0.034  
MIN  
MAX  
6.99  
0.86  
D
A
B
C
D
0.2  
5.08  
0.48  
0.08  
3.48  
-
-
-
-
C
0.019  
0.003  
0.137  
A
D
0.186  
4.72  
Contact Information  
Semtech Corporation  
Power Discretes Products Division  
200 Flynn Road, Camarillo, CA 93012  
Phone: (805)498-2111 FAX (805)498-3804  
www.semtech.com  
2011 Semtech Corp.  
4

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