1N5553US [SEMTECH]
Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode; 表面贴装气密密封标准恢复整流二极管型号: | 1N5553US |
厂家: | SEMTECH CORPORATION |
描述: | Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode |
文件: | 总4页 (文件大小:126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5550US THRU 1N5554US
Surface Mount Hermetically Sealed
Standard Recovery Rectifier Diode
POWER DISCRETES
Description
Features
Quick reference data
u Low reverse leakage current
u Hermetically sealed in fused metal oxide
u Good thermal shock resistance
u Low forward voltage drop
VR = 200 - 1000V
IF
5.0A
=
trr = 2µS
VF = 1.0V
u Avalanche capability
These products are qualified to MIL-PRF-19500/420.
They can be supplied fully released as JAN, JANTX,
and JANTXV versions.
Absolute Maximum Ratings
Electrical specifications @ TA = 25°C unless otherwise specified.
1N5550US 1N5551US 1N5552US 1N5553US 1N5554US
Symbol
Units
Working Reverse Voltage
VRWM
200
400
600
5.0
800
1000
V
Average Forward Current
@55 °C in free air, lead length
0.375"
IF(AV)
A
A
Repetitive Surge Current
@55 °C in free air, lead length
0.375"
IFRM
25
Non-Repetitive Surge Current
(tp = 8.3mS @ VR & TJMAX
(tp = 8.3mS, @ VR& 25 °C)
)
IFSM
100
150
A
Storage Temperature Range
TSTG
-65 to +175
°C
Revision: August 22nd, 2011
1
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1N5550US THRU 1N5554US
POWER DISCRETES
Electrical Specifications
Symbol 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US Units
Average Forward Current (sine wave)
- max. TA = 55 °C
- max. L = 3/8"; TL = 55 °C
IF(AV)
IF(AV)
3.0
5.0
A
A2S
V
I2t for fusing (t = 8.3mS) max
I2t
42
Forward Voltage Drop max.
@ IF = 3.0A, T= 25 °C
V F
1.0
j
Reverse Current max.
@ VRWM, Tj = 25°C
@ VRWM, Tj = 125°C
IR
IR
1.0
60
µA
Reverse Recovery Time max.
0.5A IF to 1.0A IRM recovers to 0.25A IRM(REC)
trr
Cj
2.0
92
µS
pF
Junction Capacitance typ.
@ VR = 5V, f = 1MHz
Thermal Characteristics
Symbol 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US Units
RØJEC
RØJEC at
L= 0
inch
6.5
C/W
Typical Characteristics
Fig 1. Typical junction capacitance as a function of reverse voltage.
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2011 Semtech Corp.
2
1N5550US THRU 1N5554US
POWER DISCRETES
Typical Characteristics
Fig 2. Forward voltage drop as a function of forward current
Fig 3. Maximum power versus lead temperature
Fig 4. Forward power dissipation as a function of forward
current, for sinusoidal operation.
Fig 5. Maximum ratings for capacitive loads.
www.semtech.com
2011 Semtech Corp.
3
1N5550US THRU 1N5554US
POWER DISCRETES
Ordering Information
Part Number
Description
1N5550US
1N5551US
1N5552US
1N5553US
1N5554US
Surface Mount hermetically sealed(1)
Note:
(1) Available in bulk and tape and reel packaging. Please
consult factory for quantities.
Outline Drawing
Dimensions
B
Inches
MIN
Millimeters
Note
DIMN
MAX
0.275
0.034
MIN
MAX
6.99
0.86
D
A
B
C
D
0.2
5.08
0.48
0.08
3.48
-
-
-
-
C
0.019
0.003
0.137
A
D
0.186
4.72
Contact Information
Semtech Corporation
Power Discretes Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
2011 Semtech Corp.
4
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