1N4448W [SEMTECH]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | 1N4448W |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总3页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4448W
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
W1
Top View
Marking Code: "W1"
Simplified outline SOD-123 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VRM
VR
Value
100
80
Unit
V
Peak Reverse Voltage
Reverse Voltage
V
Average Rectified Output Current
IO
150
mA
Forward Continuous Current
IFM
300
0.5
mA
A
Non-Repetitive Peak Forward Surge Current (at t = 1 µs)
IFSM
Power Dissipation
Pd
Tj
400
150
mW
O
C
Junction Temperature
Storage Temperature Range
O
C
Tstg
- 65 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 5 mA
at IF = 10 mA
at IF = 100 mA
at IF = 150 mA
0.62
0.72
0.855
1
-
-
-
V
VF
1.25
Reverse Leakage Current
at VR = 80 V
-
-
-
-
100
25
50
nA
nA
µA
µA
at VR = 20 V
at VR = 75 V, TJ = 150 C
IR
O
O
at VR = 25 V, TJ = 150 C
30
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
Ctot
trr
80
-
-
V
Capacitance
at VR = 0.5 V, f = 1 MHz
4
4
pF
ns
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
1N4448W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
1N4448W
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
ALL ROUND
∠
HE
D
A
c
∠
A
UNIT
mm
bp
D
E
HE
v
O
1.15
1.05
0.6
0.5
2.7
2.6
1.65
1.55
3.9
3.7
0.135
0.127
0.2
5
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
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