1SS413 [SEMTECH]
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE; 硅外延肖特基二极管
| 型号： | 1SS413 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 文件： | 总2页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
Q
Top View
Marking Code: "Q"
Simplified outline SOD-523 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
Reverse Voltage
VRM
VR
IFM
IO
25
V
V
20
Peak Forward Current
Average Forward Current
Surge Current (10 ms)
Power Dissipation
100
mA
mA
A
50
IFSM
Ptot
TJ
1
100
mW
O
C
Junction Temperature
Storage Temperature
125
O
C
Ts
- 55 to + 125
O
Characteristics at Ta = 25 C
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 50 mA
VF
IR
-
-
0.55
0.5
-
V
Reverse Current
at VR = 20 V
µA
pF
Total Capacitance
at VR = 0 V, f = 1 MHz
CT
3.9
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
1SS413
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-523
∠
ALL ROUND
HE
D
A
V
bp
C
D
E
HE
UNIT
mm
A
∠
O
0.4
0.3
0.135
0.127
1.25
1.15
0.85
0.75
0.70
0.60
1.7
1.5
0.1
5
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
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