SCN2C60 [SEMIWELL]
Sensitive Gate Silicon Controlled Rectifiers; 敏感栅硅控整流器
| 型号： | SCN2C60 |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 文件： | 总5页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SemiWell Semiconductor
SCN2C60
Sensitive Gate
Symbol
Silicon Controlled Rectifiers
2. Gate
○
○
○
Features
3. Anode
1. Cathode
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
◆ Low On-State Voltage (1.2V(Typ.)@I
= 1.5 A )
T(RMS)
)
TM
TO-92
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Condition
Ratings
Units
600
1.0
1.5
V
A
A
Half Sine Wave : TC = 45 °C
All Conduction Angle
IT(AV)
IT(RMS)
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
ITSM
I2t
Surge On-State Current
15
A
I2t for Fusing
A2s
W
W
A
t = 8.3ms
0.9
T =25°C, Pulse Width ≤ 1.0㎲
PGM
PG(AV)
IFGM
VRGM
TJ
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
0.1
A
T =25°C, t = 8.3ms
A
1
5.0
V
- 40 ~ 125
- 40 ~ 150
°C
°C
TSTG
Oct, 2002. Rev. 2
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCN2C60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
Repetitive Peak Off-State
Current
IDRM
VTM
IGT
10
─
─
─
─
㎂
200
TC = 125 °C
( ITM =3 A, Peak )
Peak On-State Voltage (1)
Gate Trigger Current (2)
1.2
1.7
V
─
VAK = 6 V, RL=100 Ω
TC = 25 °C
C = - 40 °C
200
500
㎂
─
─
─
─
T
VD = 7 V, RL=100 Ω
VGT
VGD
dv/dt
TC = 25 °C
TC = - 40 °C
Gate Trigger Voltage (2)
0.8
1.2
V
V
─
─
─
─
VAK = 12 V, RL=100 Ω TC = 125 °C
Non-Trigger Gate Voltage (1)
0.2
─
─
─
V
GM = 0.67VDRM
,
Critical Rate of Rise Off-State
Voltage
Exponential waveform , RGK = 1000 Ω
TJ = 125 °C
200
V/㎲
─
Critical Rate of Rise On-State
Current
I
TM = 3A, Ig = 10mA
di/dt
IH
50
A/㎲
VAK = 12 V, Gate Open
TC = 25 °C
TC = - 40 °C
2
─
Holding Current
5.0
10
mA
─
─
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
50
°C/W
°C/W
─
─
─
─
Junction to Ambient
160
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include RGK in measurement.
2/5
SCN2C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
140
120
100
80
101
100
10-1
VGM (5V)
PGM (2W)
θ = 180o
PG(AV) (0.1W)
60
π
π
2
25 ℃
θ
40
360°
20
θ : Conduction Angle
VGD(0.2V)
0
10-1
100
101
102
103
104
0.0
0.2 0.4 0.6
0.8
1.0
1.2
1.4
1.6
Gate Current [mA]
Average On-State Current [A]
Fig 4. Thermal Response
Fig 3. Typical Forward Voltage
1
1
0.1
TJ = 125oC
0.1
TJ = 25oC
0.01
0.01
0.0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
1000
10000
Instantaneous On-State Voltage [V]
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
2.0
1.6
1.2
0.8
0.4
0.0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
0
50
100
150
-50
0
50
100
150
Junction Temperature [ oC]
Junction Temperature [oC]
3/5
SCN2C60
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
9
θ = 180o
θ = 120o
8
7
6
θ = 90o
θ = 60o
θ = 30o
5
4
3
2
1
-40
-20
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Junction Temperature [℃]
Average On-State Current [A]
4/5
SCN2C60
TO-92 Package Dimension
mm
Typ.
4.2
Inch
Typ.
Dim.
Min.
Max.
Min.
Max.
A
B
0.165
3.7
4.83
14.87
0.4
0.146
0.190
0.585
0.016
0.190
0.017
C
D
E
F
G
H
I
4.43
0.174
0.554
14.07
4.43
0.33
4.83
0.45
0.174
2.54
2.54
0.100
0.100
J
0.48
0.013
0.019
A
F
E
B
C
G
1
2
3
D
1. Cathode
2. Gate
3. Anode
J
H
I
5/5
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