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SBR13003 [SEMIWELL]

High Voltage Fast-Switching NPN Power Transistor; 高压快速开关NPN功率晶体管
SBR13003
型号： SBR13003
厂家： SEMIWELL SEMICONDUCTOR    SEMIWELL SEMICONDUCTOR
描述：

High Voltage Fast-Switching NPN Power Transistor
高压快速开关NPN功率晶体管

晶体 开关 晶体管 高压
文件： 总6页 (文件大小：714K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SemiWell Semiconductor  
SBR13003  
High Voltage Fast-Switching NPN Power Transistor  
Features  
Symbol  
○
2.Collector  
- Very High Switching Speed (Typical 120ns@1.0A)  
- Minimum Lot-to-Lot hFE Variation  
- Low VCE(sat) (Typical 200mV@1.0A/0.25A)  
- Wide Reverse Bias S.O.A  
○
1.Base  
○
3.Emitter  
General Description  
TO-126  
This devices is designed for high voltage, high speed switching  
characteristic required such as lighting system, switching regulator,  
inverter and deflection circuit.  
1
2
3
Absolute Maximum Ratings  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Value  
700  
400  
9.0  
Units  
Collector-Emitter Voltage ( VBE = 0 )  
V
V
V
A
A
A
A
Collector-Emitter Voltage ( IB = 0 )  
Emitter-Base Voltage ( IC = 0 )  
Collector Current  
1.5  
Collector Peak Current ( tP ＜ 5 ms )  
Base Current  
ICM  
3.0  
IB  
0.75  
1.5  
Base Peak Current ( tP ＜ 5 ms )  
Total Dissipation at TC = 25 °C  
IBM  
PC  
TSTG  
TJ  
40  
- 65 ~ 150  
150  
W
°C  
°C  
Storage Temperature  
Max. Operating Junction Temperature  
Thermal Characteristics  
Symbol  
Parameter  
Value  
3.12  
89  
Units  
°C/W  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
Oct, 2002. Rev. 2  
1/6  
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved  
SBR13003  
Electrical Characteristics ( TC = 25 °C unless otherwise noted )  
Symbol  
Parameter  
Condition  
Min  
Typ  
Max  
Units  
V
CE = 700V  
Collector Cut-off Current  
( VBE = - 1.5V )  
1.0  
5.0  
ICEV  
-
-
mA  
VCE = 700V  
TC = 100 °C  
Collector-Emitter Sustaining Voltage  
( IB = 0 )  
VCEO(sus)  
IC = 10 mA  
-
-
-
-
-
400  
V
V
V
IC = 0.5A  
IC = 1.0A  
IB = 0.1A  
IB = 0.25A  
IB = 0.5A  
0.3  
0.5  
1.0  
VCE(sat)  
-
-
Collector-Emitter Saturation Voltage  
I
C = 1.5A  
IC = 0.5A  
IC = 1.0A  
IB = 0.1A  
IB = 0.25A  
1.0  
1.2  
VBE(sat)  
Base-Emitter Saturation Voltage  
DC Current Gain  
IC = 0.5A  
IC = 1.0A  
VCE = 2V  
VCE = 2V  
10  
5
30  
25  
hFE  
Resistive Load  
Turn-On Time  
Storage Time  
Fall Time  
I
C = 1.0A  
VCC = 125V  
IB2 = - 0.2A  
ton  
ts  
0.2  
1.5  
1.0  
3.0  
0.4  
IB1 = 0.2A  
TP = 25㎲  
-
-
㎲
㎲
tf  
0.15  
V
CC = 15V  
IC = 1.0A  
IB2 = -0.5A  
clamp = 300V  
Inductive Load  
Storage Time  
Fall Time  
IB1 = 0.2A  
L = 0.35mH  
ts  
tf  
2.0  
0.12  
4.0  
0.3  
V
V
CC = 15V  
IC = 1.0A  
IB2 = -0.5A  
Vclamp = 300V  
TC = 100 °C  
Inductive Load  
Storage Time  
Fall Time  
IB1 = 0.2A  
L = 0.35mH  
-
ts  
tf  
2.4  
0.15  
5.0  
0.4  
㎲
※ Notes :  
Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%  
2/6  
SBR13003  
Fig 1. Static Characteristics  
Fig 2. DC Current Gain  
3.0  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
40  
30  
20  
10  
0
IB = 500mA  
IB = 400mA  
IB = 300mA  
IB = 250mA  
IB = 200mA  
IB = 150mA  
TJ = 125 oC  
TJ = 25 oC  
IB = 100mA  
IB = 50mA  
※ Notes :  
V
V
= 5V  
= 1V  
CE  
CE  
IB = 0mA  
0
1
2
3
4
5
0.01  
0.1  
1
VCE, Collector-Emitter Voltage [V]  
IC, Collector Current [A]  
Fig 4. Base-Emitter Saturation Voltage  
Fig 3. Collector-Emitter Saturation Voltage  
10  
1
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
TJ = 125oC  
TJ = 25oC  
0.1  
0.01  
TJ = 25oC  
TJ = 125oC  
※ Note :  
※ Note :  
h
= 5  
h
= 5  
FE  
FE  
0.1  
1
0.1  
1
IC, Collector Current [A]  
IC, Collector Current [A]  
Fig 6. Resistive Load Storage Time  
Fig 5. Resistive Load Fall Time  
10  
1000  
※ Notes :  
V
= 125V  
= 5  
CC  
FE  
= - I  
B2  
h
I
B1  
TJ = 25oC  
TJ = 25oC  
100  
※ Notes :  
V
= 125V  
= 5  
B2  
CC  
FE  
= - I  
h
I
1
B1  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IC, Collector Current [A]  
IC, Collector Current [A]  
3/6  
SBR13003  
Fig 7. Safe Operation Areas  
Fig 8. Reverse Biased Safe Operation  
Areas  
101  
100  
10-1  
10-2  
1.6  
1.2  
0.8  
0.4  
0.0  
※ Notes :  
T
≤ 100 °C  
J
B1  
10 µs  
I
= 1 A  
100 µs  
R
C
= 0 Ω  
BB  
L
= 0.35mH  
1ms  
VBE(off) = -9V  
DC  
-5V  
-3V  
※ Single Pulse  
-1.5V  
100  
101  
102  
103  
0
100  
200  
300  
400  
500  
600  
700  
800  
VCE, Collector-Emitter Clamp Voltage [V]  
VCE, Collector-Emitter Clamp Voltage [V]  
Fig 9. Power Derating Curve  
125  
100  
75  
50  
25  
0
0
50  
100  
150  
200  
TC, Case Temperature (oC)  
4/6  
SBR13003  
Inductive Load Switching & RBSOA Test Circuit  
LC  
f
IC  
VCE  
IB1  
IB  
D.U.T  
RBB  
VClamp  
VCC  
VBE(off)  
Resistive Load Switching Test Circuit  
RC  
IC  
VCE  
IB1  
IB  
D.U.T  
RBB  
VCC  
VBE(off)  
5/6  
SBR13003  
TO-126 Package Dimension  
mm  
Typ.  
Inch  
Typ.  
Dim.  
Min.  
Max.  
7.9  
11.2  
14.7  
2.9  
Min.  
Max.  
0.311  
0.441  
0.579  
0.114  
A
B
C
D
E
F
G
H
I
7.5  
10.8  
14.2  
2.7  
0.295  
0.425  
0.559  
0.106  
3.8  
2.5  
0.150  
0.098  
1.2  
1.5  
0.047  
0.059  
2.3  
4.6  
0.091  
0.181  
J
K
L
0.48  
0.7  
0.62  
0.86  
0.019  
0.028  
0.024  
0.034  
1.4  
3.2  
0.055  
0.126  
φ
D
A
E
B
C
φ
G
L
F
3
2
1
1. Base  
2. Collector  
3. Emitter  
J
K
H
I
6/6  

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