SBR13003A [SEMIWELL]
High Voltage Fast-Switching NPN Power Transistor; 高压快速开关NPN功率晶体管
| 型号： | SBR13003A |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | High Voltage Fast-Switching NPN Power Transistor |
| 文件： | 总5页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBR13003A
SemiWell Semiconductor
High Voltage Fast-Switching NPN Power Transistor
Features
Symbol
○
2.Collector
◆ Very High Switching Speed (Typical 120ns@1.0A)
◆ Minimum Lot-to-Lot hFE Variation
◆ Low VCE(sat) (Typical 200mV@1.0A/0.25A)
◆ Wide Reverse Bias S.O.A
○
1.Base
○
3.Emitter
General Description
TO-126
This devices is designed for high voltage, high speed switch-
ing characteristic required such as lighting system, switching
regulator, inverter and deflection circuit.
1
2
3
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
Parameter
Value
700
400
9.0
Units
Collector-Emitter Voltage ( VBE = 0 )
V
V
V
A
A
A
A
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
1.5
Collector Peak Current ( tP ＜ 5 ms )
Base Current
ICM
3.0
IB
0.75
1.5
Base Peak Current ( tP ＜ 5 ms )
Total Dissipation at TC = 25 °C
IBM
PC
TSTG
TJ
40
- 65 ~ 150
150
W
°C
°C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
Parameter
Value
3.12
89
Units
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Mar, 2006. Rev. 0
1/5
SBR13003A
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
CE = 700V
Collector Cut-off Current
( VBE = - 1.5V )
1.0
5.0
ICEV
-
-
mA
VCE = 700V
TC = 100 °C
Collector-Emitter Sustaining Voltage
( IB = 0 )
VCEO(sus)
IC = 10 mA
-
-
-
-
-
400
V
V
V
IC = 0.5A
IC = 1.0A
IB = 0.1A
IB = 0.25A
IB = 0.5A
0.3
0.5
1.0
VCE(sat)
-
-
Collector-Emitter Saturation Voltage
I
C = 1.5A
IC = 0.5A
IC = 1.0A
IB = 0.1A
1.0
1.2
VBE(sat)
Base-Emitter Saturation Voltage
DC Current Gain
IB = 0.25A
IC = 0.5A
IC = 1.0A
VCE = 2V
VCE = 2V
10
5
30
25
hFE
Resistive Load
Turn-On Time
Storage Time
Fall Time
I
C = 1.0A
VCC = 125V
IB2 = - 0.2A
ton
ts
tf
0.2
1.5
0.15
1.0
3.0
0.4
IB1 = 0.2A
-
-
㎲
㎲
TP = 25㎲
V
CC = 15V
IC = 1.0A
IB2 = -0.5A
Inductive Load
Storage Time
Fall Time
IB1 = 0.2A
ts
tf
2.0
0.12
4.0
0.3
L = 0.35mH
V
clamp = 300V
V
CC = 15V
IC = 1.0A
Inductive Load
Storage Time
Fall Time
IB1 = 0.2A
IB2 = -0.5A
-
ts
tf
2.4
0.15
5.0
0.4
㎲
L = 0.35mH
Vclamp = 300V
TC = 100 °C
※ Notes :
Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%
SBR13003A-1 Hfe 13-20(Ic = 0.5A VCE = 2V)
SBR13003A-2 Hfe 18-26(Ic = 0.5A VCE = 2V)
2/5
SBR13003A
Fig.1 DC CURRENT GAIN
Fig. 2 SATURATION VOLTAGE
100
10
1
10
1
Ic=4I
B
VCE=2V
VBE(sat)
0.1
V (sat)
CE
0. 1
0.01
0.01
0.01
0.1
1
10
0.1
1
10
Ic[A], COLLECTOR CURRENT
Ic[A], COLLECTOR CURRENT
Fig.3. SWICHING TIME
Fig. 4 SAFE OPERATING AREA
10
10
1
Vcc=125V
Ic=5IB
Icmax(pulse)
Icmax(DC)
tstg
1
0. 1
0.01
tf
0.1
0.01
1
10
100
1000
0.1
1
VCE[V], COLLECTOR EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Fig. 5 POWER DERATING
50
40
30
20
10
0
0
50
100
150
200
3/5
SBR13003A
Inductive Load Switching & RBSOA Test Circuit
L
C
f
IC
V C E
IB 1
IB
D .U .T
R
V C la m
V C C
B B
p
V B E ( o f f )
Resistive Load Switching Test Circuit
R
C
IC
V C E
IB 1
IB
D .U .T
R
V C C
B B
V B E ( o f f )
4/5
SBR13003A
TO-126 Package Dimension
mm
Inch
Dim.
Min.
Typ.
Max.
7.9
Min.
Typ.
Max.
0.311
0.441
0.579
0.114
A
B
C
D
E
F
G
H
I
7.5
10.8
14.2
2.7
0.295
0.425
0.559
0.106
11.2
14.7
2.9
3.8
2.5
0.150
0.098
1.2
1.5
0.047
0.059
2.3
4.6
0.091
0.181
J
0.48
0.7
0.62
0.86
0.019
0.028
0.024
0.034
K
L
1.4
3.2
0.055
0.126
φ
D
A
E
B
C
φ
G
L
F
3
2
1
1. Base
2. Collector
3. Emitter
J
K
H
I
5/5
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