SBN13001 [SEMIWELL]
High Voltage Fast-Switching NPN Power Transistor; 高压快速开关NPN功率晶体管
| 型号： | SBN13001 |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | High Voltage Fast-Switching NPN Power Transistor |
| 文件： | 总4页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SemiWell Semiconductor
SBN13001
High Voltage Fast-Switching NPN Power Transistor
Features
Symbol
○
2.Collector
- Very High Switching Speed (Typical 120ns@100mA)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 120mV@100mA/20mA)
- Wide Reverse Bias S.O.A
○
1.Base
○
3.Emitter
General Description
TO-92
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
1
2
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
Parameter
Value
700
400
8.0
Units
Collector-Emitter Voltage ( VBE = 0 )
V
V
V
A
A
A
A
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
0.2
Collector Peak Current ( tP ＜ 5 ms )
Base Current
ICM
0.4
IB
0.1
Base Peak Current ( tP ＜ 5 ms )
Total Dissipation at TA = 25 °C
IBM
0.2
PC
TSTG
TJ
750
- 65 ~ 150
150
mW
°C
Storage Temperature
Max. Operating Junction Temperature
°C
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJA
Thermal Resistance, Junction-to-Ambient
166
°C/W
Oct, 2002. Rev. 1
1/4
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
SBN13001
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
CE = 650V
Collector Cut-off Current
( VBE = - 1.5V )
1.0
5.0
ICEV
-
-
mA
VCE = 650V
TC = 100 °C
Collector-Emitter Sustaining Voltage
( IB = 0 )
VCEO(sus)
IC = 1 mA
-
-
400
V
IC = 50mA
IB = 10mA
IB = 20mA
0.3
0.4
VCE(sat)
VBE(sat)
hFE
-
-
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
-
-
V
V
IC = 100mA
IC = 50mA
IC = 50mA
IB = 10mA
1
VCE = 10V
VCE = 10V
10
10
I
C = 100mA
-
30
Resistive Load
Turn-On Time
Storage Time
Fall Time
I
C = 100mA
VCC = 125V
IB2 = -20mA
ton
ts
tf
0.2
1.5
0.15
1.0
3.0
0.4
IB1 = 20mA
-
-
㎲
㎲
TP = 25㎲
V
CC = 15V
IC = 100mA
IB2 = -50mA
Inductive Load
Storage Time
Fall Time
IB1 = 20mA
L = 0.35mH
ts
tf
2.0
0.12
4.0
0.3
Vclamp = 300V
V
CC = 15V
IC = 100mA
IB2 = -50mA
Vclamp = 300V
TC = 100 °C
Inductive Load
Storage Time
Fall Time
IB1 = 20mA
L = 0.35mH
-
ts
tf
2.4
0.15
5.0
0.4
㎲
※ Notes :
Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%
2/4
SBN13001
Fig 1. Static Characteristics
Fig 2. DC Current Gain
0.5
0.4
0.3
0.2
0.1
0.0
25
20
15
10
IB=70mA
IB=60mA
IB=50mA
TJ = 125 oC
IB=40mA
IB=30mA
TJ = 25 oC
IB=20mA
IB=10mA
※ Notes :
= 5V
V
CE
IB=0mA
0
1
2
3
4
5
1E-3
0.01
0.1
VCE,Collector-Emitter Voltage[V]
IC, Collector Current [A]
Fig 4. Base-Emitter Saturation Voltage
Fig 3. Collector-Emitter Saturation Voltage
1
1.0
0.9
0.8
0.7
0.6
0.5
TJ=25oC
TJ=125oC
TJ=25oC
0.1
TJ=125oC
※ Notes :
※ Notes :
h
= 5
h
= 5
FE
FE
0.01
0.01
0.1
0.01
0.1
IC,Collector Current[A]
IC,Collector Current[A]
Fig 6. Power Derating Curve
Fig 5. Safe Operation Areas
100
10-1
10-2
10-3
125
100
75
50
25
0
DC
100
101
102
103
0
50
100
150
200
TC,Case Temperature(oC)
VCE,Collector-Emitter Clamp Voltage[V]
3/4
SBN13001
Inductive Load Switching & RBSOA Test Circuit
LC
f
IC
VCE
IB1
IB
D.U.T
RBB
VClamp
VCC
VBE(off)
Resistive Load Switching Test Circuit
RC
IC
VCE
IB1
IB
D.U.T
RBB
VCC
VBE(off)
4/4
相关型号：
©2020 ICPDF网 联系我们和版权申明