MCK100-6 [SEMIWELL]
Sensitive Gate Silicon Controlled Rectifiers; 敏感栅硅控整流器
| 型号： | MCK100-6 |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 文件： | 总5页 (文件大小：590K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SemiWell Semiconductor
MCK100-6
Sensitive Gate
Silicon Controlled Rectifiers
Symbol
3. Gate
○
○
○
Features
2. Anode
1. Cathode
◆ Repetitive Peak Off-State Voltage : 400V
◆ R.M.S On-State Current ( I
= 0.8 A )
T(RMS)
◆ Low On-State Voltage (1.2V(Typ.)@ I
◆ Available with tape & reel
)
TM
SOT- 89
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Condition
Ratings
400
Units
V
A
A
Half Sine Wave : TC = 112 °C
All Conduction Angle
IT(AV)
0.5
IT(RMS)
0.8
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
ITSM
Surge On-State Current
10
A
I2t
PGM
PG(AV)
IFGM
VRGM
TJ
t = 8.3ms
0.415
I2t for Fusing
A2s
W
W
A
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
0.1
1
5.0
V
- 40 ~ 125
- 40 ~ 150
°C
°C
TSTG
Oct, 2003. Rev. 2
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
MCK100-6
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
AK = VDRM or VRRM ; RGK = 1000 Ω
Repetitive Peak Off-State
Current
IDRM
VTM
IGT
TC = 25 °C
10
200
─
─
─
─
㎂
TC = 125 °C
( ITM = 1 A, Peak )
Peak On-State Voltage (1)
Gate Trigger Current (2)
1.2
1.7
V
─
VAK = 6 V, RL=100 Ω
TC = 25 °C
200
500
─
─
─
─
㎂
TC = - 40 °C
VD = 7 V, RL=100 Ω
VGT
VGD
dv/dt
TC = 25 °C
Gate Trigger Voltage (2)
0.8
1.2
V
V
─
─
─
─
TC = - 40 °C
V
AK = 12 V, RL=100 Ω
TC = 125 °C
Non-Trigger Gate Voltage (1)
0.2
─
─
─
V
D = Rated VDRM , Exponential wave-
Critical Rate of Rise Off-State
Voltage
form , RGK = 1000 Ω
500
800
V/㎲
TJ = 125 °C
Critical Rate of Rise On-State
Current
I
PK = 20A ; PW = 10㎲ ; diG/dt = 1A/㎲
di/dt
50
A/㎲
─
─
Igt = 20mA
VAK = 12 V, Gate Open
Initiating Curent = 20mA
IH
Holding Current
2
─
5.0
10
mA
─
─
T
C = 25 °C
TC = - 40 °C
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
15
°C/W
°C/W
─
─
─
─
Junction to Ambient
125
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include RGK in measurement.
2/5
MCK100-6
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
160
140
120
100
80
101
100
10-1
θ = 180o
VGM(5V)
PGM(2W)
PG(AV)(0.1W)
2
π
π
60
θ
25oC
40
360°
: Conduction Angle
θ
20
VGD(0.2V)
0
0.0
100
101
102
103
104
0.1
0.2
0.3
0.4
0.5
0.6
Average On-State Current [A]
Gate Current [mA]
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
101
102
101
100
10
Rθ
(J-C)
125oC
100
25oC
-1
10
10-2
10-1
100
101
102
103
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State Voltage [V]
Time (sec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
1
1
0.1
-50
0.1
-50
0
50
100
150
0
50
100
150
Junction Temperature[oC]
Junction Temperature[oC]
3/5
MCK100-6
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
θ = 180o
θ = 120o
θ = 90o
θ = 60o
θ = 30o
1
0.1
-50
0
50
100
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Junction Temperature[oC]
Average On-State Current [A]
4/5
MCK100-6
SOT- 89 Package Dimension
mm
Typ.
Inch
Typ.
Dim.
Min.
Max.
1.60
0.56
0.52
0.44
0.44
4.60
1.80
2.60
Min.
Max.
0.063
0.022
0.020
0.017
0.017
0.181
0.071
0.102
A
B
1.40
0.36
0.32
0.35
0.35
4.40
1.40
2.30
0.055
0.014
0.013
0.014
0.014
0.173
0.055
0.091
B1
C
C1
D
D1
E
e
e1
H
L
R
1.50
0.25
0.060
0.010
2.90
3.94
0.90
3.10
4.25
1.10
0.114
0.155
0.035
0.122
0.167
0.043
1
2
3
1. Cathode
2. Anode
3. Gate
5/5
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