F16M40CT [SEMIWELL]
16A Schottky Barrier Rectifier; 16A肖特基整流器
| 型号： | F16M40CT |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | 16A Schottky Barrier Rectifier |
| 文件： | 总3页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PROVISIONAL
SemiWell Semiconductor
F16M40CT
16A Schottky Barrier Rectifier
Symbol
Features
ꢀ
ꢀ
1
:b
ꢀ Plastic material meets UL94V-0
ꢀ Metal silicon junction
ꢀ Very low forward voltage drop
ꢀ
2
3
b
:
ꢀ High current / High surge capability
ꢀ Guarding for over voltage protection
ꢀ Lead solderable per MIL-STD202,method 208 guaranteed
ꢀ Lead temperature for soldering purpose 250°C Max
for 10 second
TO-220F
ꢀ Weight : 2.2 gram (approximately)
General Description
The F16M40CT schottky Rectifier has been designed for
applcations requiring low forward voltage drop and switching
power supply, dc-dc converter, free-wheeling diode, battery
charging, polarity protection application.
1
2
3
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
Repetitive Peak Reverse Voltage
40
40
V
V
RRM
V
Maximum DC Reverse Voltage
R
Average Forward Current @ T = 97°C
Per Diode
8
16
A
A
C
I
F(AV)
Total Device
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions half sinewave,single phase, 60Hz)
I
250
A
FSM
Non-Repetitive Avalanche Energy @ T =25°C , Vdd = 15V , L=18uH
Eas
4.5
mJ
°C
°C
C
T
Maximum Junction Temperature
Storage Temperature Range
- 65 ~ 125
- 65 ~ 150
J
T
STG
Thermal Characteristics
Symbol
Parameter
Value
Units
R
Maximum Thermal Resistance, Junction-to-Case ( per diode )
3.5
°C/W
θJC
Nov, 2002. Rev. 0
1/3
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
F16M40CT
Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Units
Reverse Leakage Current
1
50
V
= V
T
= 25 °C
I
-
-
mA
R
RRM
C
R
T
= 125 °C
C
Forward Voltage Drop
I
I
I
I
= 8 A
T
T
T
T
= 25 °C
= 125 °C
= 25 °C
= 125 °C
F
F
F
F
C
C
C
C
0.55
0.50
0.70
0.62
= 8 A
V
C
-
-
V
F
= 16 A
= 16 A
F
Typical Junction Capacitance @ f =1MHZ , V =4V , Tj =25ꢀ
700
T
P
T
R
2/3
F16M40CT
Fig 1. VF-IF Characteristic
Fig 2. VR-IR Characteristic
10
TJ=125-
TJ=75-
10
1
TJ=125-
TJ=25-
1
0.1
0.01
TJ=25-
0.1
0
8
16
24
32
40
48
56
0.2
0.4
0.6
0.8
1.0
Reverse Voltage, VR[V]
Forward Voltage Drop, VF[V]
Fig 4. Forward current derating curve
Fig 3. Typical junctiion capacitance
12
10
8
6. Notes
1. TJ = 25-
2. F = 1MHz
3. Vsig = 50mVP-P
1000
6
4
2
100
0.1
0
1
10
100
0
25
50
75
100
125
150
Reverse Voltage, VR[V]
Case Temperature, TC[-]
Fig 5. Maximum non-repetitive forward
surge current per diode
300
250
200
150
100
50
0
1
10
100
Reverse Voltage, VR[V]
3/3
相关型号：
F16P03QS
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 30V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
F16P04QS
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 40V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
F16P05QS
Rectifier Diode, Schottky, 1 Phase, 2 Element, 17A, 50V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
F16P06QS
Rectifier Diode, Schottky, 1 Phase, 2 Element, 17A, 60V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
F16P09QS
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 90V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
F16P10FS
Rectifier Diode, 1 Phase, 2 Element, 16A, 100V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
F16P10QS
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 100V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
F16P20FS
Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
F16P30FS
Rectifier Diode, 1 Phase, 2 Element, 16A, 300V V(RRM), Silicon, SIMILAR TO TO-220AB, FULL PACK-3
NIEC
©2020 ICPDF网 联系我们和版权申明