首页 |元器件品牌

BT136-D [SEMIWELL]

Bi-Directional Triode Thyristor; 双向晶闸管
BT136-D
型号： BT136-D
厂家： SEMIWELL SEMICONDUCTOR    SEMIWELL SEMICONDUCTOR
描述：

Bi-Directional Triode Thyristor
双向晶闸管
文件： 总5页 (文件大小：606K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Preliminary  
SemiWell Semiconductor  
BT136-D  
Bi-Directional Triode Thyristor  
Symbol  
○ 2.T2  
Features  
▼▲  
◆ Repetitive Peak Off-State Voltage : 600V  
○
3.Gate  
◆ R.M.S On-State Current ( I  
= 4 A )  
T(RMS)  
◆ High Commutation dv/dt  
○
1.T1  
◆ Sensitive Gate Triggering 4 Mode  
◆ Non-isolated Type  
TO-220  
General Description  
This device is sensitive gate triac suitable for direct coupling  
to TTL, HTL, CMOS and application such as various logic  
functions, low power AC switching applications, such as fan  
speed, small light controllers and home appliance equipment.  
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
Condition  
Ratings  
Units  
600  
4
V
A
TC = 107 °C  
IT(RMS)  
One Cycle, 50Hz/60Hz, Peak,  
Non-Repetitive  
ITSM  
Surge On-State Current  
25/27  
A
I2t  
PGM  
PG(AV)  
IGM  
t = 10ms  
3.1  
I2t for Fusing  
A2s  
W
W
A
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
5
Over any 20ms period  
0.5  
2
VGM  
TJ  
Peak Gate Voltage  
5
V
Operating Junction Temperature  
Storage Temperature  
- 40 ~ 125  
- 40 ~ 150  
°C  
°C  
TSTG  
Mar, 2004. Rev. 0  
1/5  
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.  
BT136-D  
Electrical Characteristics  
Ratings  
Typ.  
Symbol  
Items  
Conditions  
Unit  
Min.  
Max.  
V
D = VDRM, Single Phase, Half Wave  
Repetitive Peak Off-State  
Current  
IDRM  
0.5  
mA  
V
─
─
TJ = 125 °C  
VTM  
IT = 5 A, Inst. Measurement  
Peak On-State Voltage  
1.7  
5
─
─
─
─
─
─
─
─
─
─
─
─
─
─
─
─
─
─
I+  
Ⅰ
GT1  
I -  
5
Ⅱ
GT1  
V
D = 6 V, RL=10 Ω  
Gate Trigger Current  
mA  
I -  
5
Ⅲ
Ⅳ
Ⅰ
GT3  
I+  
12  
1.5  
1.5  
1.5  
2.5  
─
GT3  
V+  
GT1  
V-GT1  
V-GT3  
Ⅱ
V
D = 6 V, RL=10 Ω  
Gate Trigger Voltage  
V
Ⅲ
V+  
Ⅳ
─
GT3  
VGD  
TJ = 125 °C, VD = 1/2 VDRM  
Non-Trigger Gate Voltage  
0.2  
V
TJ = 125 °C, [di/dt]c = -0.75 A/ms,  
VD=2/3 VDRM  
Critical Rate of Rise Off-State  
Voltage at Commutation  
(dv/dt)c  
5.0  
V/㎲  
─
─
IH  
Holding Current  
5
mA  
─
─
─
Rth(j-c)  
Thermal Impedance  
Junction to case  
3.0  
°C/W  
─
2/5  
BT136-D  
Fig 1. Gate Characteristics  
Fig 2. On-State Voltage  
102  
101  
100  
10-1  
101  
100  
10-1  
VGK = 5V  
PGK = 5W  
PG(AV) = 0.5W  
25℃  
125o  
C
25o  
C
VGD = 0.2V  
102  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
101  
103  
Gate Current [mA]  
On-State Voltage [V]  
Fig 4. On State Current vs.  
Allowable Case Temperature  
Fig 3. On State Current vs.  
Maximum Power Dissipation  
7
6
5
4
3
2
1
0
130  
θ
π
π
2
θ
θ
θ
= 180o  
= 150o  
= 120o  
θ
360°  
120  
110  
100  
θ
= 90o  
θ : Conduction Angle  
= 60o  
= 30o  
θ
θ
θ
θ
= 30o  
θ
θ
= 60o  
= 90o  
= 120o  
θ
π
π
2
θ
θ
θ
= 150o  
= 180o  
360°  
θ : Conduction Angle  
0
1
2
3
4
5
0
1
2
3
4
5
RMS On-State Current [A]  
RMS On-State Current [A]  
Fig 6. Gate Trigger Voltage vs.  
Junction Temperature  
Fig 5. Surge On-State Current Rating  
( Non-Repetitive )  
35  
30  
25  
20  
15  
10  
5
10  
60Hz  
1
50Hz  
0.1  
-50  
0
100  
101  
102  
103  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (cycles)  
3/5  
BT136-D  
Fig 7. Gate Trigger Current vs.  
Junction Temperature  
Fig 8. Transient Thermal Impedance  
101  
100  
10-1  
10  
I+  
I-  
I-  
GT1  
GT1  
GT3  
1
I+  
GT3  
0.1  
-50  
10-3  
10-2  
10-1  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [oC]  
Time (sec)  
Fig 9. Gate Trigger Characteristics Test Circuit  
10Ω  
10Ω  
10Ω  
10Ω  
▼▲  
6V  
▼▲  
6V  
▼▲  
6V  
▼▲  
6V  
●
●
●
A
A
A
●
A
RG  
RG  
RG  
RG  
V
V
V
V
●
●
●
●
Test Procedure Ⅰ  
Test Procedure Ⅱ  
Test Procedure Ⅲ  
Test Procedure Ⅳ  
4/5  
BT136-D  
TO-220 Package Dimension  
mm  
Typ.  
Inch  
Typ.  
Dim.  
Min.  
Max.  
10.1  
6.7  
9.47  
13.3  
1.4  
Min.  
Max.  
0.398  
0.264  
0.373  
0.524  
0.055  
A
B
C
D
E
F
G
H
I
9.7  
6.3  
9.0  
12.8  
1.2  
0.382  
0.248  
0.354  
0.504  
0.047  
1.7  
2.5  
0.067  
0.098  
3.0  
1.25  
2.4  
3.4  
1.4  
2.7  
5.15  
2.6  
1.55  
0.6  
0.118  
0.049  
0.094  
0.197  
0.087  
0.049  
0.018  
0.024  
0.134  
0.055  
0.106  
0.203  
0.102  
0.061  
0.024  
0.039  
J
K
L
5.0  
2.2  
M
N
O
φ
1.25  
0.45  
0.6  
1.0  
3.6  
0.142  
φ
I
H
E
A
B
C
F
M
L
G
1
2
3
D
1. T1  
2. T2  
3. Gate  
J
N
O
K
5/5  

相关型号：

BT136-O-C-N-B

 AC switching
JSMC

BT136-O-HF-N-B

 AC switching
JSMC

BT136B

 Triacs
NXP

BT136B-500

 Triacs
NXP

BT136B-500D

 Triacs logic level
NXP

BT136B-500E

 Triacs sensitive gate
NXP

BT136B-500F

 Triacs
NXP

BT136B-500G

 Triacs
NXP

BT136B-600

 Triacs
NXP

BT136B-600D

 Triacs logic level
NXP

BT136B-600D/T3

 TRIAC, 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, SOT-404, 3 PIN
NXP

BT136B-600DT/R

 TRIAC, 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB, PLASTIC, SOT-404, 3 PIN
NXP
©2020 ICPDF网 联系我们和版权申明