SKM300GB066D_09 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SKM300GB066D_09 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总6页 (文件大小：858K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 300GB066D
ꢋ
ꢏ +,-ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ3 ꢏ +, -ꢕ
#00
9?0
900
ꢔ
&
&
%
ꢋ3 ꢏ *>, -ꢕ
ꢋꢍ ꢏ +, -ꢕ
ꢋꢍ ꢏ @0 -ꢕ
ꢕ
%
%
ꢕ:Aꢏ+$%ꢕꢆꢂꢃ
#00
B +0
#
&
ꢔ
ꢕ:A
ꢔ8ꢖꢉ
ꢑꢚꢈꢍ
ꢔꢕꢕ ꢏ 9#0 ꢔ7 ꢔ8ꢖ 4 *, ꢔ7 ꢋ3 ꢏ *,0 -ꢕ
ꢔꢕꢖꢉ C #00 ꢔ
6ꢈ
®
SEMITRANS 3
Inverse Diode
Trench IGBT Modules
%
ꢋ3 ꢏ *>, -ꢕ
ꢋꢍ ꢏ +, -ꢕ
ꢋꢍ ꢏ @0 -ꢕ
9,0
+,0
&
&
D
%
%
%
D:Aꢏ+$%Dꢆꢂꢃ
#00
&
&
D:A
SKM 300GB066D
ꢑꢚ ꢏ *0 ꢃꢈ7 ꢈꢊꢆ1
ꢋ3 ꢏ *>, -ꢕ
*>#0
DꢉA
Module
%
,00
&
-ꢕ
-ꢕ
ꢔ
ꢑꢗ:Aꢉꢘ
ꢋꢛ3
. /0 111 2 *>,
. /0 111 2 *+,
/000
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
&ꢕ" * ꢃꢊꢆ1
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢋ
ꢏ +,-ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
min.
typ.
max. Units
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
ꢔ8ꢖꢗꢑꢎꢘ
ꢔ8ꢖ ꢏ ꢔꢕꢖ" %ꢕ ꢏ /"@ ꢃ&
,
,"@
#",
ꢔ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
%
ꢔ8ꢖ ꢏ 0 ꢔ" ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ3 ꢏ +, -ꢕ
ꢋ3 ꢏ +, -ꢕ
ꢋ3 ꢏ *,0 -ꢕ
ꢋ3 ꢏ +,-ꢕ
ꢋ3 ꢏ *,0-ꢕ
0"*,
0"?
0"/,
*
ꢃ&
ꢔ
ꢕꢖꢉ
ꢔꢕꢖ0
Typical Applications
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
()ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ'ꢅꢌꢈ
0"@,
*"@
0"?
9
ꢔ
ꢀ
ꢀ
ꢀ
ꢌꢕꢖ
ꢔ8ꢖ ꢏ *, ꢔ
ꢃE
ꢃE
ꢔ
+">
9"@
*"?
+"*
ꢔꢕꢖꢗꢈꢐꢑꢘ
%
ꢕꢆꢂꢃ ꢏ 900 &" ꢔ8ꢖ ꢏ *, ꢔ ꢋ3 ꢏ +,-ꢕꢍꢎꢊꢚꢒꢅꢛ1
*"/,
*">
Remarks
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ' ꢑꢂ ꢋ ꢏ
*+,-ꢕ ꢃꢐ$" ꢌꢅꢍꢂꢃꢃꢅꢆ'ꢅ' ꢋ
./0 111 2*,0-ꢕ
)ꢌꢂ'ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ'
ꢋ3 ꢏ *,0-ꢕꢍꢎꢊꢚꢒꢅꢛ1
ꢔ
ꢀ
ꢍ
ꢕꢊꢅꢈ
*@",
*"+
ꢆD
ꢆD
ꢏ
ꢂꢚ
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ +," ꢔ8ꢖ ꢏ 0 ꢔ
ꢏ * AꢁF
ꢕꢌꢅꢈ
G8
0",,
+/00
*
ꢆD
ꢆꢕ
H
ꢀ
ꢀ
ꢔ8ꢖ ꢏ .@ꢔ1112*,ꢔ
ꢋ3 ꢏ -ꢕ
ꢂꢌ ꢋ 4*,0-ꢕ
3
ꢉꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ 'ꢐꢑꢐ5 ꢑ 4 #6ꢈ7 ꢔ
4
:
ꢚ
8ꢖ
8ꢊꢆꢑ
*,ꢔ7 ꢋ ꢏ *,0-ꢕ7 ꢔ 4 9#0ꢔ" ꢇꢈꢅ
ꢑ'ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ'ꢗꢂ ꢘ
*,0
/@
ꢆꢈ
ꢆꢈ
ꢃI
ꢆꢈ
ꢆꢈ
3
ꢍꢍ
ꢂ ꢈꢂ ꢑ : ꢆꢅꢍꢅꢈꢈꢐꢌꢓ ;
:
8ꢂꢆ ꢏ +"/ E
ꢔꢕꢕ ꢏ 900ꢔ
%ꢕꢏ 900&
8
ꢋꢐ<ꢅ ꢍꢐꢌꢅ ꢂ ꢂꢛꢅꢌ.ꢛꢂꢒꢑꢐꢄꢅ ꢍꢐꢇꢈꢅ'
!ꢓ ꢈꢑꢌꢐꢓ ꢊꢆ'ꢇꢍꢑꢐꢆꢍꢅꢈ
>",
,/0
,9
ꢀ
:
ꢏ +"/ E
ꢋ3 ꢏ *,0 -ꢕ
ꢔ8ꢖ ꢏ .@ꢔJ2*,ꢔ
8ꢂ
ꢑ
ꢖꢂ
**",
ꢃI
:
ꢚꢅꢌ %8Kꢋ
0"*,
LJM
ꢑꢎꢗ3.ꢍꢘ
GB
1
06-10-2009 NOS
© by SEMIKRON
SKM 300GB066D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔD ꢏ ꢔꢖꢕ
%Dꢆꢂꢃ ꢏ 900 &7 ꢔ8ꢖ ꢏ 0 ꢔ
ꢋ3 ꢏ +, -ꢕꢍꢎꢊꢚꢒꢅꢛ1
ꢋ3 ꢏ +, -ꢕ
*"/
0"?,
*",
*"#
*
ꢔ
ꢔ
ꢔD0
ꢌD
ꢋ3 ꢏ +, -ꢕ
+
ꢃE
%
%
D ꢏ 900 &
ꢋ3 ꢏ *,0 -ꢕ
9/0
/>
&
::A
Gꢌꢌ
ꢖꢌꢌ
'ꢊJ'ꢑ ꢏ >000 &J6ꢈ
6ꢕ
ꢔ8ꢖ ꢏ .@ ꢔ7 ꢔꢕꢕ ꢏ 900 ꢔ
*0",
ꢃI
®
SEMITRANS 3
:
ꢚꢅꢌ 'ꢊꢂ'ꢅ
0"+,
+0
LJM
ꢑꢎꢗ3.ꢍꢘN
Module
Oꢕꢖ
Trench IGBT Modules
*,
0"9,
0",
ꢆꢁ
ꢃE
ꢃE
:
ꢌꢅꢈ1" ꢑꢅꢌꢃꢊꢆꢐꢒ.ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ +, -ꢕ
ꢋꢍꢐꢈꢅꢏ *+, -ꢕ
ꢕꢕP2ꢖꢖP
SKM 300GB066D
:
ꢚꢅꢌ ꢃꢂ'ꢇꢒꢅ
0"09@
,
LJM
Qꢃ
Qꢃ
ꢄ
ꢑꢎꢗꢍ.ꢈꢘ
Aꢈ
Aꢑ
ꢙ
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆ< A#
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ A#
9
+",
,
9+,
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢀ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
()ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ'ꢅꢌꢈ
ꢀ
ꢀ
ꢀ
Remarks
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ' ꢑꢂ ꢋ ꢏ
ꢀ
ꢍ
*+,-ꢕ ꢃꢐ$" ꢌꢅꢍꢂꢃꢃꢅꢆ'ꢅ' ꢋ
./0 111 2*,0-ꢕ
ꢏ
ꢂꢚ
)ꢌꢂ'ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ'
ꢀ
ꢀ
ꢂꢌ ꢋ 4*,0-ꢕ
3
ꢉꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ 'ꢐꢑꢐ5 ꢑ 4 #6ꢈ7 ꢔ
4
ꢚ
8ꢖ
*,ꢔ7 ꢋ ꢏ *,0-ꢕ7 ꢔ 4 9#0ꢔ" ꢇꢈꢅ
3
ꢍꢍ
ꢂ ꢈꢂ ꢑ : ꢆꢅꢍꢅꢈꢈꢐꢌꢓ ;
8
ꢋꢐ<ꢅ ꢍꢐꢌꢅ ꢂ ꢂꢛꢅꢌ.ꢛꢂꢒꢑꢐꢄꢅ ꢍꢐꢇꢈꢅ'
!ꢓ ꢈꢑꢌꢐꢓ ꢊꢆ'ꢇꢍꢑꢐꢆꢍꢅꢈ
ꢀ
GB
2
06-10-2009 NOS
© by SEMIKRON
SKM 300GB066D
Z
th
Symbol Conditions
Values
Units
Z
th(j-c)l
:
:
:
:
ꢊ ꢏ *
ꢊ ꢏ +
ꢊ ꢏ 9
ꢊ ꢏ /
ꢊ ꢏ *
ꢊ ꢏ +
ꢊ ꢏ 9
*0>
ꢃ<JM
ꢃ<JM
ꢃ<JM
ꢃ<JM
ꢈ
ꢊ
ꢊ
ꢊ
ꢊ
90
**"#
*"/
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
0"0,/
0"0*//
0"000>
ꢈ
ꢈ
®
ꢑꢐꢇꢊ
ꢊ ꢏ /
0"000/
ꢈ
SEMITRANS 3
Z
th(j-c)D
:
:
:
:
ꢊ ꢏ *
ꢊ ꢏ +
ꢊ ꢏ 9
ꢊ ꢏ /
ꢊ ꢏ *
ꢊ ꢏ +
ꢊ ꢏ 9
*/0
ꢃ<JM
ꢃ<JM
ꢃ<JM
ꢃ<JM
ꢈ
ꢊ
ꢊ
ꢊ
ꢊ
Trench IGBT Modules
@+
+9",
/",
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
0"0,/
0"0*
0"00*,
SKM 300GB066D
ꢈ
ꢈ
ꢑꢐꢇꢊ
ꢊ ꢏ /
0"000+
ꢈ
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
()ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ'ꢅꢌꢈ
ꢀ
ꢀ
ꢀ
Remarks
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ' ꢑꢂ ꢋ ꢏ
ꢀ
ꢍ
*+,-ꢕ ꢃꢐ$" ꢌꢅꢍꢂꢃꢃꢅꢆ'ꢅ' ꢋ
./0 111 2*,0-ꢕ
ꢏ
ꢂꢚ
)ꢌꢂ'ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ'
ꢀ
ꢀ
ꢂꢌ ꢋ 4*,0-ꢕ
3
ꢉꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ 'ꢐꢑꢐ5 ꢑ 4 #6ꢈ7 ꢔ
4
ꢚ
8ꢖ
*,ꢔ7 ꢋ ꢏ *,0-ꢕ7 ꢔ 4 9#0ꢔ" ꢇꢈꢅ
3
ꢍꢍ
ꢂ ꢈꢂ ꢑ : ꢆꢅꢍꢅꢈꢈꢐꢌꢓ ;
8
ꢋꢐ<ꢅ ꢍꢐꢌꢅ ꢂ ꢂꢛꢅꢌ.ꢛꢂꢒꢑꢐꢄꢅ ꢍꢐꢇꢈꢅ'
!ꢓ ꢈꢑꢌꢐꢓ ꢊꢆ'ꢇꢍꢑꢐꢆꢍꢅꢈ
ꢀ
GB
3
06-10-2009 NOS
© by SEMIKRON
SKM 300GB066D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 300GB066D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 CAL diode recovered charge
5
06-10-2009 NOS
© by SEMIKRON
SKM 300GB066D
UL recognized, file no. E 63 532
ꢕꢐꢈꢅ N ,#
8K
ꢕꢐꢈꢅ N,#
6
06-10-2009 NOS
© by SEMIKRON
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