SKIIP1813GB123-3DLV3 [SEMIKRON]
Insulated Gate Bipolar Transistor, 1700A I(C), 1200V V(BR)CES;
| 型号： | SKIIP1813GB123-3DLV3 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 1700A I(C), 1200V V(BR)CES 栅 |
| 文件： | 总5页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKiiP 1813 GB123-3DL V3
Absolute Maximum Ratings
Ts = 25°C unless otherwise specified
Symbol Conditions
Values
Unit
System
1)
VCC
Visol
It(RMS)
IFSM
I²t
Operating DC link voltage
900
4300
400
10200
520
V
V
A
DC, t = 1 s, main terminals to heat sink
per AC terminal, Tterminal <115°C
Tj = 125 °C, tp = 10 ms, sin 180°
Tj = 150 °C, tp = 10 ms, diode
fundamental output frequency
storage temperature
A
kA²s
kHz
°C
fout
Tstg
1
SKiiP® 3
-40 ... 85
IGBT
VCES
IC
Tj = 25 °C
1200
1695
1306
V
A
A
2-pack-integrated intelligent
Power System
Ts = 25 °C
Ts = 70 °C
Tj = 150 °C
ICnom
Tj
1800
-40 ... 150
A
°C
junction temperature
SKiiP 1813 GB123-3DL V3
Features
Diode
VRRM
IF
Tj = 25 °C
1200
1411
1068
1410
-40 ... 150
V
A
A
A
°C
Ts = 25 °C
Tj = 150 °C
• SKiiP technology inside
• Trench IGBTs
Ts = 70 °C
IFnom
Tj
• CAL HD diode technology
• Integrated current sensor
• Integrated temperature sensor
• Integrated heat sink
junction temperature
Driver
V s
ViH
VisolPD
dv/dt
fsw
power supply
13 ... 30
15 + 0.3
1170
75
V
V
V
kV/µs
kHz
• UL recognized File no. E63532
input signal voltage (high)
QPD <= 10pC, PRIM to POWER
secondary to primary side
switching frequency
Typical Applications*
• Renewable energies
• Traction
10
• Elevators
Characteristics
Ts = 25°C unless otherwise specified
• Industrial drives
Symbol Conditions
IGBT
VCE(sat)
min.
typ.
max.
Unit
Footnotes
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
1.7
1.9
0.90
0.80
0.9
1.2
331
585
2.1
V
V
V
IC = 900 A
at terminal
1 With assembly of suitable MKP capacitor per
terminal
VCE0
1.10
1.00
1.1
V
rCE
m
m
mJ
mJ
K/W
K/W
at terminal
1.5
V
V
CC = 600 V
CC = 900 V
Eon + Eoff
IC = 900 A
Tj = 125 °C
Rth(j-s)
Rth(j-r)
per IGBT switch
per IGBT switch
0.02
0.018
S33
© by SEMIKRON
Rev. 3 – 23.11.2012
1
SKiiP 1813 GB123-3DL V3
Characteristics
Ts = 25°C unless otherwise specified
Symbol Conditions
min.
typ.
max.
Unit
Diode
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF = VEC
1.50
1.50
0.9
0.7
0.7
0.9
63
1.80
V
V
V
IF = 900 A
at terminal
VF0
rF
1.10
0.90
0.8
1
V
m
m
mJ
mJ
K/W
K/W
at terminal
SKiiP® 3
IF = 900 A
Tj = 125 °C
V
R = 600 V
Err
VR = 900 V
84
Rth(j-s)
Rth(j-r)
per diode switch
per diode switch
0.038
0.058
2-pack-integrated intelligent
Power System
Driver
Vs
IS0
Is
VIT+
VIT-
supply voltage non stabilized
bias current @Vs=24V, fsw = 0, IAC = 0
k1 = 42 mA/kHz, k2 = 0.00044 mA/A2
input threshold voltage (HIGH)
Input threshold voltage (LOW)
input resistance
13
24
300
30
V
mA
mA
V
SKiiP 1813 GB123-3DL V3
Features
• SKiiP technology inside
• Trench IGBTs
2
=
300
12.3
+ k1* fsw + k2 * IAC
4.6
V
RIN
CIN
10
1
0.0122
3
125
0.625
2250
k
nF
ms
µs
ns
µs
APEAK
°C
V
input capacitance
• CAL HD diode technology
• Integrated current sensor
• Integrated temperature sensor
• Integrated heat sink
tpRESET
tTD
tjitter
tSIS
ITRIPSC
Ttrip
VDCtrip
error memory reset time
top / bottom switch interlock time
jitter clock time
short pulse suppression time
over current trip level
over temperature trip level
• UL recognized File no. E63532
0.7
2295
120
2205
110
115
not impl.
Typical Applications*
over voltage trip level,
input-output
• Renewable energies
• Traction
turn-on
• Elevators
td(on)IO
1.4
1.4
µs
µs
VCC = 900 V
propagation time
• Industrial drives
I
C = 900 A
input-output
turn-off
Tj = 25 °C
td(off)IO
propagation time
Footnotes
1 With assembly of suitable MKP capacitor per
terminal
System
flow rate=420m3/h, Ta=25°C, 500m
above sea level
Rth(r-a)
0.0294
K/W
RCC'+EE'
LCE
CCHC
terminals to chip, Ts = 25 °C
commutation inductance
per phase, AC-side
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
DC terminals, SI Units
AC terminals, SI Units
SKiiP System w/o heat sink
heat sink
0.17
4
5.1
3.6
m
nH
nF
mA
Nm
Nm
kg
I
CES + IRD
Mdc
Mac
w
6
13
8
15
2.4
6.2
wh
kg
S33
2
Rev. 3 – 23.11.2012
© by SEMIKRON
SKiiP 1813 GB123-3DL V3
© by SEMIKRON
Rev. 3 – 23.11.2012
3
SKiiP 1813 GB123-3DL V3
Fig. 1: Typical IGBT output characteristic
Fig. 2: Typical diode output characteristics
Fig. 4: Typical energy losses E = f(Ic, Vcc)
Fig. 6: Transient thermal impedance Zth(j-r)
Fig. 3: Typical energy losses E = f(Ic, Vcc)
Fig. 5: Pressure drop Δp versus flow rate V
4
Rev. 3 – 23.11.2012
© by SEMIKRON
SKiiP 1813 GB123-3DL V3
Fig. 7: Transient thermal impedance Zth(r-a)
Fig. 8: Coefficients of thermal impedances
Fig. 9: Thermal resistance Rth(r-a) versus flow rate V
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 3 – 23.11.2012
5
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