SKIIP1513GB122-3DUL [SEMIKRON]

Half Bridge Based Peripheral Driver;

SKIIP1513GB122-3DUL


型号：	SKIIP1513GB122-3DUL
厂家：	SEMIKRON INTERNATIONAL
描述：	Half Bridge Based Peripheral Driver
文件：	总1页 (文件大小：18K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SKiiP 1513GB122-3DL

I. Power section 3 * SKiiP513GB122CT per phase

Absolute maximum ratings

SKiiP 3

SK integrated intelligent

Power PACK

2-pack

SKiiP 1513GB122-3DL ²⁾

Symbol Conditions

Values

Units

IGBT

V_CES

1200

900

± 20

V

V

V

A

1)

V_CC

V_GES

I_C

Operating DC link voltage

T_{heat sink}= 25 (70) °C

Target data

housing S33

1500 (1125)

Inverse diode

I_F

I_FSM

T_{heat sink}= 25 (70) °C

T_j= 150 °C, t_p= 10ms; sin

1500 (1125)

12960

A

A

I²t (Diode) Diode, T_j= 150 °C, 10ms

840

kA²s

°C

V

T_j, (T_stg

V_isol

I_C-package

)

-40...+150 (125)

3000

AC, 1min.

T_{heat sink}= 70°C, T_term³⁾=115°C

3 * 500

A

Characteristics

Symbol Conditions

min.

typ.

max.

2,3

Units

IGBT

5)

V_CEsat

V_CEO

r_CE

I_C= 900A, T_j= 25 (125)°C

V_GE= 15V; T_j= 25 (125) °C

V_GE= 15V; T_j= 25 (125) °C

2,0 (2,2)

1,2 (1,1) 1,3 (1,2)

1,0 (1,5) 1,3 (1,7)

270

480

3,6 (108)

4

V

V

-

-

-

-

-

-

-

-

Features

mW

mJ

mJ

mA

nH

mW

·

SKiiP technology inside

I_C=900A

T_j=125°C

Vcc=600V

Vcc=900V

-

-

-

-

-

4)

E_on+ E_off

-

pressure contact of ceramic

to heat sink; low thermal

impedance

I_CES

L_CE

V_GE=0,V_CE=V_CES,T_j=25(125) °C

top, bottom

-

-

-

pressure contact of main

electric terminals

pressure contact of auxiliary

electric terminals

increased thermal cycling

capability

low stray inductance

homogenous current

distribution

R_CC´-EE´

terminal-chip, T_j=25 °C

0,13

Inverse diode

V_F⁵⁾= V_ECI_F= 900A; T_j= 25(125) °C

1,9 (1,5)

1,2 (0,9) 1,4 (1,0)

0,9 (0,9) 1,0 (1,0)

72

109

V

V

mW

mJ

mJ

-

-

-

-

-

2,2

V_TO

r_T

T_j= 25 (125) °C

T_j= 25 (125) °C

I_C=900A

Vcc=600V

Vcc=900V

-

-

4)

-

-

E_RR

T_j=125°C

Thermal characteristics

R_thjs

per IGBT

0,021

0,042

0,029

°C/W

°C/W

°C/W

-

-

-

-

-

-

·

·

·

·

·

low loss IGBTs

R_thjs

R_thsa

per diode

L: P16w heat sink; 280 m3/ h

CAL diode technology

integrated current sensor

integrated temperature sensor

high power density

2)

Current sensor

I_{p RMS}

I_{pmax RMS}

3 * 400

3 * 500

A

A

T_a=100° C , V_supply= ± 15V

t £ 2 s, T_a=100° C

1)

assembly of suitable MKP

capacitor per terminal is

mandatory (SEMIKRON type

41046230 is recommended)

D integrated gate driver

U with DC-bus voltage

Mechanical data

M1

DC terminals, SI Units

4

8

6

10

Nm

Nm

-

-

M2

AC terminals, SI Units

2)

measurement (option for GB)

L mounted on standard heat

sink for forced air cooling

W mounted on standard liquid

cooled heat sink

T_term= temperature of terminal

with SKiiP 3 gate driver

measured at chip level

3)

4)

5)

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,

expressed or implied is made regarding delivery, performance or suitability.

B 7 - 24

20.03.01 08:53

ã by SEMIKRON

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