SKIIP132GDL120-412CTVU [SEMIKRON]
Half Bridge Based Peripheral Driver, 188A;
| 型号： | SKIIP132GDL120-412CTVU |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Half Bridge Based Peripheral Driver, 188A |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKiiP 3-phase bridge
SKiiPPACK
Absolute Maximum Ratings
SK integrated intelligent
Power PACK
Symbol Conditions1)
Values
3000
Units
V
4)
Visol
AC, 1min
3-phase bridge with
brake chopper (E/A)
SKiiP
Top ,Tstg
Operating / stor. temperature
-25...+85
°C
IGBT and Inverse Diode
VCES
132 GDL 120 - 412 CTV 7,9)
1200
900
150
V
V
A
°C
A
5)
VCC
IC
Tj
Operating DC link voltage
IGBT
IGBT + Diode
Diode
Preliminary Data
Case S5GDL
3)
-40...+150
150
IF
IFM
IFSM
Diode, tp < 1 ms
Diode, Tj = 150 °C, 10ms; sin
300
1440
10
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms
Driver
kAs2
VS1
VS2
fsmax
dV/dt
Stabilized Power Supply
Non-stabilized Power Supply
Switching frequency
18
30
20
75
V
V
kHz
kV/µs
Primary to secondary side
Characteristics
Symbol Conditions 1)
min.
typ.
max.
Units
Features
IGBT11)
V(BR)CES
• Short circuit protection, due to
evaluation of current sensor
signals
Driver without supply
V
mA
mA
≥VCES
−
−
−
−
10
−
0,4
−
ICES
VGE = 0,
Tj = 25 °C
Tj = 125 °C
VCE = VCES
• Isolated power supply
• Low thermal impedance
• Optimal thermal management
with integrated heatsink
• Pressure contact technology
with increased power cycling
capability, compact design
• Low stray inductance
• High power, small losses
• Over-temperature protection
VTO
rT
VCesat
VCesat
Tj = 125 °C
Tj = 125 °C
IC = 125A,
IC = 125A,
1,38
14,7
3,2
3,05
45/73
V
mΩ
V
V
mJ
−
−
−
−
−
−
−
−
−
−
Tj = 125 °C
Tj = 25 °C
Eon + Eoff VCC=600/900V,IC=150A
Tj = 125 °C
CCHC
LCE
per SkiiP, AC side
Top, Bottom
1,4
15
nF
nH
−
−
−
−
Inverse Diode 2)
1)
Theatsink = 25 °C, unless
VF = VEC IF= 125A;
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
2,38
2,55
6
V
V
mJ
V
−
−
−
−
−
−
−
−
0,91
5,7
otherwise specified
CAL = Controlled Axial Lifetime
VF= VEC
IF= 125A;
2)
Eon + Eoff IF= 150A;
Technology (soft and fast)
without driver
Driver input to DC link/ AC
3)
VTO
rT
Tj = 125 °C
Tj = 125 °C
−
−
4)
mΩ
output to heatsink
with Semikron-DC link (low
inductance)
other heatsinks on request
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
options available for driver:
Thermal Characteristics
10)
5)
Rthjs
Rthjs
Rthsa
per IGBT
per Diode
P16 heatsink; see case
0,180
0,375
0,033
°C/W
°C/W
°C/W
−
−
−
−
−
−
10)
6)
6,10)
7)
Driver
IS1
IS2
Supply current 15V-supply
Supply current 24V-supply
Interlock-time
340+260*fs /fsmax+3,5*IAC/A
250+170*fs /fsmax+2,6*IAC/A
2,3
mA
mA
µs
9)
tinterlock-driver
U - DC link voltage sense
F – Fiber optic connector
“s” referenced to temperature
sensor
NPT-technology with homo-
genous current-distribution
SKiiPPACK protection
10)
ITRIPSC
ITRIPLG
TTRIP
Short circuit protection
A
A
°C
V
188 ± 2%
43 +/- 2%
115 ± 5%
920 ± 2%
Ground fault protection
Over-temp. protection
UDC-protection
11)
9)
UDCTRIP
Mechanical Data
M1
DC terminals, SI Units
4
8
6
10
Nm
Nm
−
−
M2
AC terminals, SI Units
28.01.99
by SEMIKRON
SKiiP Brake-chopper
SKiiPPACK
Absolute Maximum Ratings
SK integrated intelligent
Power PACK
Symbol Conditions1)
Values
3000
Units
V
4)
Visol
AC, 1min
3-phase bridge with
brake chopper (E/A)
SKiiP
Top ,Tstg
Operating / stor. temperature
-25...+85
°C
IGBT and Inverse Diode
VCES
132 GDL 120 - 412 CTV 7,9)
1200
900
150
V
V
A
°C
A
5)
VCC
IC
Tj
Operating DC link voltage
IGBT
IGBT + Diode
Diode
Preliminary Data
Case S5GDL
3)
-40...+150
150
IF
IFM
IFSM
Diode, tp < 1 ms
Diode, Tj = 150 °C, 10ms; sin
300
1440
10
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms
Driver
kAs2
VS1
VS2
fsmax
dV/dt
Stabilized Power Supply
Non-stabilized Power Supply
Switching frequency
18
30
5
V
V
kHz
kV/µs
Primary to secondary side
50
Characteristics
Symbol Conditions 1)
min.
typ.
max.
Units
Features
IGBT11)
V(BR)CES
• Short circuit protection, due to
evaluation of current sensor
signals
Driver without supply
V
mA
mA
≥VCES
−
−
−
−
10
−
0,4
−
ICES
VGE = 0,
Tj = 25 °C
Tj = 125 °C
VCE = VCES
• Isolated power supply
• Low thermal impedance
• Optimal thermal management
with integrated heatsink
• Pressure contact technology
with increased power cycling
capability, compact design
• Low stray inductance
• High power, small losses
• Over-temperature protection
VTO
rT
VCesat
VCesat
Tj = 125 °C
Tj = 125 °C
IC = 125A,
IC = 125A,
1,38
14,7
3,2
3,05
45/73
V
mΩ
V
V
mJ
−
−
−
−
−
−
−
−
−
−
Tj = 125 °C
Tj = 25 °C
Eon + Eoff VCC=600/900V,IC=150A
Tj = 125 °C
CCHC
LCE
per SkiiP, AC side
Top, Bottom
1,4
15
nF
nH
−
−
−
−
Inverse Diode 2)
1)
Theatsink = 25 °C, unless
VF = VEC IF= 125A;
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
2,38
2,55
6
V
V
mJ
V
−
−
−
−
−
−
−
−
0,91
5,7
otherwise specified
CAL = Controlled Axial Lifetime
VF= VEC
IF= 125A;
2)
Eon + Eoff IF= 150A;
Technology (soft and fast)
without driver
Driver input to DC link/ AC
3)
VTO
rT
Tj = 125 °C
Tj = 125 °C
−
−
4)
mΩ
output to heatsink
with Semikron-DC link (low
inductance)
other heatsinks on request
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
E - adapted to 400 Vrms; U -
Thermal Characteristics
10)
5)
Rthjs
Rthjs
Rthsa
per IGBT
per Diode
P16 heatsink; see case
0,180
0,375
0,033
°C/W
°C/W
°C/W
−
−
−
−
−
−
10)
6)
6,10)
7)
Driver
IS1
IS2
Supply current 15V-supply
Supply current 24V-supply
Interlock-time
67+10*fs /fsmax+0*IAC/A
67+10*fs /fsmax+0,0*IAC/A
2,3
mA
mA
µs
8)
tinterlock-driver
adapted to 460 Vrms
options available for driver:
9)
SKiiPPACK protection
ITRIPSC
ITRIPLG
TTRIP
Short circuit protection
A
A
°C
V
188 ± 2%
-
U - DC link voltage sense
F – Fiber optic connector
“s” referenced to temperature
sensor
NPT-technology with homo-
genous current-distribution
Ground fault protection
Over-temp. protection
UDC-protection
10)
115 ± 5%
920 ± 2%
9)
UDCTRIP
11)
Mechanical Data
M1
M2
DC terminals, SI Units
AC terminals, SI Units
4
8
6
10
Nm
Nm
−
−
by SEMIKRON
28.01.99
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