12ACC12T4V10 [SEMIKRON]
Twin 6-pack;
| 型号： | 12ACC12T4V10 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Twin 6-pack |
| 文件： | 总9页 (文件大小：1222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKiiP 12ACC12T4V10
Absolute Maximum Ratings
Symbol Conditions
IGBT 1 - 6
Values
Unit
Tj = 25 °C
VCES
IC
1200
18
15
19
16
8
24
V
A
A
A
A
A
A
V
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IC
λpaste=2.5 W/(mK)
Tj = 175 °C
ICnom
ICRM
VGES
MiniSKiiP® 1
Twin 6-pack
ICRM = 3 x ICnom
VCC = 800 V
-20 ... 20
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
SKiiP 12ACC12T4V10
IGBT 7 - 12
Tj = 25 °C
VCES
IC
1200
28
23
31
26
15
45
-20 ... 20
V
A
A
A
A
A
A
V
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Features
• Trench 4 IGBTs
IC
λpaste=2.5 W/(mK)
Tj = 175 °C
• Robust and soft freewheeling diodes in
CAL technology
ICnom
ICRM
VGES
• Highly reliable spring contacts for
electrical connections
ICRM = 3 x ICnom
VCC = 800 V
• UL recognised: File no. E63532
Typical Applications*
• 4Q inverters
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Remarks
Tj
-40 ... 175
• Max. case temperature limited to
TC=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage VDC≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
Diode 1 - 6
VRRM
IF
Tj = 25 °C
1200
14
11
15
12
8
16
V
A
A
A
A
A
A
A
°C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 150 °C
IF
λpaste=2.5 W/(mK)
Tj = 150 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
10 ms, sin 180°, Tj = 150 °C
55
-40 ... 150
Diode 7 - 12
Tj = 25 °C
VRRM
IF
1200
23
18
24
20
15
45
V
A
A
A
A
A
A
A
°C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IF
λpaste=2.5 W/(mK)
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 3 x IFnom
10 ms, sin 180°, Tj = 150 °C
65
-40 ... 175
Module
It(RMS)
Tstg
20 A per spring
20
-40 ... 125
2500
A
°C
V
Visol
AC sinus 50 Hz, 1 min
ACC
© by SEMIKRON
Rev. 5.0 – 20.11.2015
1
SKiiP 12ACC12T4V10
Characteristics
Symbol Conditions
IGBT 1 - 6
min.
typ.
max.
Unit
IC = 8 A
Tj = 25 °C
VCE(sat)
1.85
2.25
2.10
2.45
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
131
194
5.8
0.90
0.80
150
206
6.5
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
chiplevel
VGE = 15 V
chiplevel
MiniSKiiP® 1
Twin 6-pack
VGE = VCE V, IC = 1 mA
Tj = 25 °C
VGE(th)
ICES
5
0.1
0.3
VGE = 0 V
CE = 1200 V
V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
0.49
0.05
0.03
45
0.0
117
70
1
300
120
VCE = 25 V
GE = 0 V
V
SKiiP 12ACC12T4V10
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Features
• Trench 4 IGBTs
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
ns
I
C = 8 A
ns
mJ
ns
R
R
G on = 51 Ω
G off = 51 Ω
• Robust and soft freewheeling diodes in
CAL technology
di/dton = 97 A/µs
di/dtoff = 106 A/µs
du/dt = 3300 V/µs
• Highly reliable spring contacts for
electrical connections
ns
• UL recognised: File no. E63532
V
GE = +15/-15 V
Tj = 125 °C
Eoff
0.7
mJ
Typical Applications*
• 4Q inverters
Ls = 22 nH
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Rth(j-s)
Rth(j-s)
1.84
1.6
K/W
K/W
Remarks
• Max. case temperature limited to
TC=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage VDC≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
IGBT 7 - 12
VCE(sat)
IC = 15 A
Tj = 25 °C
1.85
2.25
2.10
2.45
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
70
103
5.8
0.1
-
0.90
0.08
0.06
85
0
92
74
2.1
319
77
0.90
0.80
80
110
6.5
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
chiplevel
VGE = 15 V
chiplevel
VGE = VCE V, IC = 1 mA
VGE(th)
ICES
5
Tj = 25 °C
0.3
VGE = 0 V
V
CE = 1200 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
VCE = 25 V
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 15 A
R
R
G on = 39 Ω
G off = 39 Ω
di/dton = 188 A/µs
di/dtoff = 200 A/µs
du/dt = 3500 V/µs
ns
V
GE = +15/-15 V
Tj = 150 °C
Eoff
1.6
mJ
Ls = 22 nH
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Rth(j-s)
Rth(j-s)
1.3
1.1
K/W
K/W
ACC
2
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
Characteristics
Symbol Conditions
Diode 1 - 6
min.
typ.
max.
Unit
IF = 8 A
Tj = 25 °C
VF = VEC
1.96
2.08
2.22
2.34
V
V
V
GE = 0 V
Tj = 125 °C
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
VF0
rF
1.00
0.80
120
160
5.4
1.10
0.90
140
180
V
V
mΩ
mΩ
A
chiplevel
chiplevel
MiniSKiiP® 1
Twin 6-pack
IF = 8 A
IRRM
Qrr
di/dtoff = 93 A/µs
1.9
µC
V
V
GE = -15 V
CC = 600 V
Tj = 125 °C
Err
0.8
mJ
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Rth(j-s)
Rth(j-s)
2.5
2.2
K/W
K/W
SKiiP 12ACC12T4V10
Diode 7 - 12
VF = VEC
IF = 15 A
Tj = 25 °C
2.38
2.44
2.71
2.77
V
V
V
GE = 0 V
Tj = 150 °C
Features
• Trench 4 IGBTs
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.30
0.90
72
103
8.9
1.50
1.10
81
V
V
mΩ
mΩ
A
chiplevel
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
chiplevel
111
IF = 15 A
• UL recognised: File no. E63532
IRRM
Qrr
di/dtoff = 220 A/µs
2.2
µC
Typical Applications*
• 4Q inverters
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
0.8
mJ
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Rth(j-s)
Rth(j-s)
1.92
1.7
K/W
K/W
Remarks
• Max. case temperature limited to
TC=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage VDC≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
Module
LCE
Ms
60
30
nH
Nm
g
to heat sink
2
2.5
w
Temperature Sensor
1670 ±
3%
R100
Tr=100°C (R25=1000Ω)
Ω
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2
], A = 7.635*10-3 °C-1,
R(T)
B = 1.731*10-5 °C-2
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
ACC
© by SEMIKRON
Rev. 5.0 – 20.11.2015
3
SKiiP 12ACC12T4V10
IGBT 1-6 - Fig. 1:
Typ. output characteristic
IGBT 1-6 - Fig. 2:
Typ. rated current vs. temperature IC = f(TS)
IGBT 1-6 - Fig. 3:
Typ. turn-on /-off energy = f(IC)
IGBT 1-6 - Fig. 4:
Typ. turn-on /-off energy = f(RG)
IGBT 1-6 - Fig. 5:
Typ. transfer characteristic
IGBT 1-6 - Fig. 6:
Typ. gate charge characteristic
4
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
IGBT 1-6 - Fig. 7:
Typ. switching times vs. IC
IGBT 1-6 - Fig. 8:
Typ. switching times vs. gate resistor RG
IGBT 1-6 - Fig. 9:
Transient thermal impedance of IGBT and Diode
IGBT 1-6 - Fig. 10:
CAL diode forward characteristic
IGBT 1-6 - Fig. 11:
Typ. CAL diode peak reverse recovery current
IGBT 1-6 - Fig. 12:
Typ. CAL diode recovery charge
© by SEMIKRON
Rev. 5.0 – 20.11.2015
5
SKiiP 12ACC12T4V10
IGBT 7-12 - Fig. 1:
Typ. output characteristic
IGBT 7-12 - Fig. 2:
Typ. rated current vs. temperature IC = f(TS)
IGBT 7-12 - Fig. 3:
Typ. turn-on /-off energy = f(IC)
IGBT 7-12 - Fig. 4:
Typ. turn-on / -off energy = f(RG)
IGBT 7-12 - Fig. 5:
Typ. transfer characteristic
IGBT 7-12 - Fig. 6:
Typ. gate charge characteristic
6
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
IGBT 7-12 - Fig. 7:
Typ. switching times vs. IC
IGBT 7-12 - Fig. 8:
Typ. switching times vs. gate resistor RG
IGBT 7-12 - Fig. 9:
Transient thermal impedance of IGBT and Diode
IGBT 7-12 - Fig. 10:
CAL diode forward characteristic
IGBT 7-12 - Fig. 11:
Typ. CAL diode peak reverse recovery current
IGBT 7-12 - Fig. 12:
Typ. CAL diode recovery charge
© by SEMIKRON
Rev. 5.0 – 20.11.2015
7
SKiiP 12ACC12T4V10
pinout, dimensions
pinout
8
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
© by SEMIKRON
Rev. 5.0 – 20.11.2015
9
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