TIP126 [SEMIHOW]

Monolithic Construction With Built In Base-Emitter Shunt Resistors; 整体结构与内置的基射极分流电阻
TIP126
型号: TIP126
厂家: SEMIHOW CO.,LTD.    SEMIHOW CO.,LTD.
描述:

Monolithic Construction With Built In Base-Emitter Shunt Resistors
整体结构与内置的基射极分流电阻

文件: 总5页 (文件大小:504K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TIP125/126/127  
SEMIHOW REV.A0,Oct 2007  
TIP125/126/127  
Monolithic Construction With Built In  
Base-Emitter Shunt Resistors  
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)  
- Collector-Emitter Sustaining Voltage  
- Low Collector-Emitter Saturation Voltage  
- Industrial Use  
PNP Epitaxial  
Silicon Darlington  
Transistor  
- Complementary to TIP120/121/122  
Equivalent Circuit  
Absolute Maximum Ratings Ta=25unless otherwise noted  
CHARACTERISTICS  
SYMBOL  
RATING  
UNIT  
Collector-Base Voltage : TIP125  
VCBO  
-60  
-80  
-100  
V
V
V
: TIP126  
: TIP127  
Collector-Emitter Voltage : TIP125  
VCEO  
-60  
-80  
-100  
V
V
V
: TIP126  
: TIP127  
TO-220  
1. Base  
2. Collector  
3. Emitter  
Emitter-Base Voltage  
Collector Current(DC)  
Collector Current(Pulse)  
Base Current  
Collector Dissipation(Ta=25)  
Collector Dissipation(Tc=25)  
Junction Temperature  
Storage Temperature  
VEBO  
IC  
ICP  
IB  
PC  
PC  
TJ  
-5  
-5  
-8  
-120  
2
65  
V
A
A
W
W
150  
-65~150  
1
2
3
TSTG  
Electrical Characteristics Ta=25unless otherwise noted  
CHARACTERISTICS  
SYMBOL  
Test Condition  
Min  
Max  
Unit  
Collector-Emitter Sustaining Voltage  
VCEO(SUS)  
: TIP125  
: TIP126  
: TIP127  
-60  
-80  
-100  
V
V
V
IC=-100mA, IB=0  
Collector Cut-off Current  
: TIP125  
ICEO  
VCE= -30V,IB=0  
-2  
-2  
-2  
: TIP126  
: TIP127  
V
V
CE= -40V,IB=0  
CE= -50V,IB=0  
Collector Cut-off Current  
: TIP125  
ICBO  
VCE= -60V,IE=0  
-1  
-1  
-1  
: TIP126  
: TIP127  
V
V
CE= -80V,IE=0  
CE= -100V,IE=0  
Emitter Cut-off Current  
DC Current Gain  
IEBO  
hFE  
VEB= -5V,IC=0  
-2  
VCE= -3V,IC= -0.5A  
1000  
1000  
V
CE= -3V,IC= -3A  
Collector-Emitter Saturation Voltage  
VCE(sat)  
IC= -3A,IB= -12mA  
IC= -5A,IB= -20mA  
-2  
-4  
V
V
Base-Emitter ON Voltage  
VBE(on)  
Cob  
VCE= -3V,IC= -3A  
-2.5  
300  
V
VCB= -10V,IE=0, f=0.1MHz  
Output Capacitance  
* Pulse Test: PW300us, Duty Cycle2%  
SEMIHOW REV.A0,Oct 2007  
Typical Characteristics  
SEMIHOW REV.A0,Oct 2007  
Package Dimension  
TO-220 (A)  
±0.20  
±0.20  
9.90  
20  
4.50  
±0.  
0
3.6  
±0.20  
1.30  
φ
±0.20  
2.40  
±0.20  
1.27  
±0.20  
1.52  
±0.20  
0.80  
2.54typ  
2.54typ  
±0.20  
0.50  
Dimensions in Millimeters  
SEMIHOW REV.A0,Oct 2007  
Package Dimension  
TO-220 (B)  
±0.20  
±0.20  
4.57  
20  
0.  
±
4
±0.20  
3.8  
1.27  
φ
±0.20  
2.67  
±0.20  
1.27  
±0.20  
0.81  
2.54typ  
2.54typ  
±0.20  
0.40  
Dimensions in Millimeters  
SEMIHOW REV.A0,Oct 2007  

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