TIP126 [SEMIHOW]
Monolithic Construction With Built In Base-Emitter Shunt Resistors; 整体结构与内置的基射极分流电阻![TIP126](http://pdffile.icpdf.com/pdf1/p00161/img/icpdf/TIP12_893548_icpdf.jpg)
型号: | TIP126 |
厂家: | ![]() |
描述: | Monolithic Construction With Built In Base-Emitter Shunt Resistors |
文件: | 总5页 (文件大小:504K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TIP125/126/127
◎ SEMIHOW REV.A0,Oct 2007
TIP125/126/127
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
PNP Epitaxial
Silicon Darlington
Transistor
- Complementary to TIP120/121/122
Equivalent Circuit
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage : TIP125
VCBO
-60
-80
-100
V
V
V
: TIP126
: TIP127
Collector-Emitter Voltage : TIP125
VCEO
-60
-80
-100
V
V
V
: TIP126
: TIP127
TO-220
1. Base
2. Collector
3. Emitter
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
-5
-5
-8
-120
2
65
V
A
A
㎃
W
W
℃
℃
150
-65~150
1
2
3
TSTG
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
VCEO(SUS)
: TIP125
: TIP126
: TIP127
-60
-80
-100
V
V
V
IC=-100mA, IB=0
Collector Cut-off Current
: TIP125
ICEO
VCE= -30V,IB=0
-2
-2
-2
㎃
㎃
㎃
: TIP126
: TIP127
V
V
CE= -40V,IB=0
CE= -50V,IB=0
Collector Cut-off Current
: TIP125
ICBO
VCE= -60V,IE=0
-1
-1
-1
㎃
㎃
㎃
: TIP126
: TIP127
V
V
CE= -80V,IE=0
CE= -100V,IE=0
Emitter Cut-off Current
DC Current Gain
IEBO
hFE
VEB= -5V,IC=0
-2
㎃
VCE= -3V,IC= -0.5A
1000
1000
V
CE= -3V,IC= -3A
Collector-Emitter Saturation Voltage
VCE(sat)
IC= -3A,IB= -12mA
IC= -5A,IB= -20mA
-2
-4
V
V
Base-Emitter ON Voltage
VBE(on)
Cob
VCE= -3V,IC= -3A
-2.5
300
V
VCB= -10V,IE=0, f=0.1MHz
Output Capacitance
㎊
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎ SEMIHOW REV.A0,Oct 2007
Typical Characteristics
◎ SEMIHOW REV.A0,Oct 2007
Package Dimension
TO-220 (A)
±0.20
±0.20
9.90
20
4.50
±0.
0
3.6
±0.20
1.30
φ
±0.20
2.40
±0.20
1.27
±0.20
1.52
±0.20
0.80
2.54typ
2.54typ
±0.20
0.50
Dimensions in Millimeters
◎ SEMIHOW REV.A0,Oct 2007
Package Dimension
TO-220 (B)
±0.20
±0.20
4.57
20
0.
±
4
±0.20
3.8
1.27
φ
±0.20
2.67
±0.20
1.27
±0.20
0.81
2.54typ
2.54typ
±0.20
0.40
Dimensions in Millimeters
◎ SEMIHOW REV.A0,Oct 2007
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