2N4959UB [SEMICOA]
Chip Type 2C4957 Geometry 0006 Polarity PNP; 芯片型号2C4957几何0006极性PNP
| 型号： | 2N4959UB |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Chip Type 2C4957 Geometry 0006 Polarity PNP |
| 文件： | 总1页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2C4957
Ge ne ric Pa c ka ge d Pa rts :
2N4957, 2N4958, 2N4959
Chip Type 2C4957
Geometry 0006
Polarity PNP
Chip type 2C4957 by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
APPLICATIONS:
Designed for high-gain, low-noise class A
amplifiers, oscillators and mixers.
Part Numbers:
Features: Special Characteristics
ft = 1.6 GHz (typ) at 2.0 mA/10V
2N4957, 2N4957UB, 2N4958, 2N4958UB,
2N4959, 2N4959UB, SD4957, SD4957F,
SQ4957, SQ4957F
Radiation graphs available
Mechanical Specifications
Top
Al - 12 kÅ min.
Au - 6.5 kÅ nom.
2.3 mils x 2.3 mils
2.3 mils x 2.3 mils
Metallization
Backside
Emitter
Base
Bonding Pad Size
8 mils nominal
Die Thickness
Chip Area
16 mils x 16 mils
Silox Passivated
Top Surface
Electrical Characteristics
TA = 25oC
Parameter
BVCEO
Test conditions
Min
30
Max
---
Unit
V dc
V dc
V dc
µA
IC = 1.0 mA
IC = 100 µA
IE = 100 µA
VCB = 10 V dc
BVCBO
BVEBO
ICBO
30
---
3.0
---
---
0.1
150
hFE
VCE = 10 V, IC = 2.0 mA
20
---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 µs, duty cycle less than 2%.
相关型号：
2N4962LEADFREE
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
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