2N4029 [SEMICOA]
Type 2N4029 Geometry 6700 Polarity PNP; 类型2N4029几何6700极性PNP
| 型号： | 2N4029 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N4029 Geometry 6700 Polarity PNP |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N4029
Ge ne ric Pa rt Numbe r:
2N4029
Type 2N4029
Geometry 6700
Polarity PNP
Qual Level: JAN - JANTXV
REF: MIL-PRF-19500/512
Features:
·
General-purpose transistor for
high speed switching and driver
applicatons.
·
·
Housed in a TO-18 case.
Also available in chip form using
the 6700 chip geometry.
·
The Min and Max limits shown are
per MIL-PRF-19500/512 which
Semicoa meets in all cases.
TO-18
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
80
V
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
80
5.0
1.0
V
V
Collector Current, Continuous
mA
Power Dissipation at 25oC ambient
Derate above 25oC
0.5
Watt
PT
mW/oC
2.86
oC
TJ
Operating Junction Temperature
Storage Temperature
-55 to +200
-55 to +200
oC
TSTG
Data Sheet No. 2N4029
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
IC = 10 µA, pulsed
Symbol
Min
Max
Unit
V(BR)CBO
80
---
V
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
Emitter-Base Breakdown Voltage
IC = 10 µA, pulsed
V(BR)CEO
V(BR)EBO
80
---
---
V
V
5.0
Collector-Base Cutoff Current
VCB = 60 V
ICBO1
ICBO2
---
---
10
25
nA
µA
VCB = 60 V, TA = +150oC
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 2.0 V
Base-Emitter Cutoff Current
VBE = 3 V
ICEX1
IEBO
---
---
25
25
nA
nA
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
IC = 100 µA, VCE = 5 V
hFE1
hFE2
hFE3
hFE4
hFE5
50
100
70
---
300
---
---
---
---
---
---
IC = 100 mA, VCE = 5.0 V (pulse test)
IC = 500 mA, VCE = 5 V (pulse test)
IC = 1.0 A, VCE = 5 V (pulse test)
25
---
IC = 500 mA, VCE = 5.0 V (pulse test), TA = -55oC
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
30
---
VCE(sat)1
VCE(sat)2
VCE(sat)3
---
---
---
0.15
0.5
V dc
V dc
V dc
IC = 500 mA, IB = 50 mA (pulse test)
IC = 1.0 A, IB = 100 mA (pulse test)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
1.0
VBE(sat)1
VBE(sat)2
---
---
0.9
1.2
V dc
V dc
IC = 500 mA, IB = 50 mA (pulse test)
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 50 mA, f = 100 MHz
Symbol
Min
Max
Unit
|hfe|
1.5
6.0
---
Open Circuit Output Capacitance
COBO
CIBO
---
---
20
80
pF
pF
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Switching Characteristics
Delay Time
Symbol
Min
Max
Unit
td
---
15
ns
IC = 500 mA, IB1 = 50 mA
Rise Time
IC = 500 mA, IB1 = 50 mA
Storage Time
tr
ts
tf
---
---
---
25
175
35
ns
ns
ns
IC = 500 mA, IB1 = IB2 = 50 mA
Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
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