2N3998_02 [SEMICOA]
Silicon NPN Transistor; 硅NPN晶体管
| 型号： | 2N3998_02 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon NPN Transistor |
| 文件： | 总2页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3998
Data Sheet
Description
Applications
• High-speed power switching
• Power transistor
Semicoa Semiconductors offers:
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3998J)
• JANTX level (2N3998JX)
• JANTXV level (2N3998JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Features
• Hermetically sealed TO-x metal can
• Also available in chip configuration
• Chip geometry 9201
• Radiation testing (total dose) upon request
• Reference document:
MIL-PRF-19500/374
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
• Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
VCEO
VCBO
Rating
80
100
Unit
Volts
Volts
Volts
A
Emitter-Base Voltage
VEBO
IC
8
Collector Current, Continuous
5
W
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
2
PT
PT
11.4
mW/°C
W
30
300
mW/°C
°C/W
Thermal Resistance
3.33
RθJC
TJ
°C
°C
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3998
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Symbol
V(BR)CBO
Test Conditions
IC = 10 µA
Min
100
80
Typ
Max
Units
Volts
Volts
V(BR)CEO IC = 50 mA
µA
ICEO
VCE = 60 Volts
10
VCE = 80 Volts
nA
µA
nA
µA
ICES1
ICES1
IEBO1
IEBO2
200
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
50
VCE = 80 Volts, TA = 150°C
VEB = 5 Volts
200
10
V
EB = 8 Volts
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 50 mA, VCE = 2 Volts
IC = 1 A, VCE = 2 Volts
IC = 5 A, VCE = 5 Volts
IC = 1 A, VCE = 2 Volts
TA = -55°C
IC = 1 A, IB = 100 mA
IC = 5 A, IB = 500 mA
IC = 1 A, IB = 100 mA
IC = 5 A, IB = 500 mA
hFE1
hFE2
hFE3
hFE4
30
40
15
10
120
DC Current Gain
VBEsat1
VBEsat2
VCEsat1
VCEsat2
0.6
1.2
1.6
0.25
2
Volts
Volts
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
VCE = 5 Volts, IC = 1 A,
f = 10 MHz
|hFE|
3
12
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
pF
Open Circuit Output Capacitance
COBO
150
Switching Characteristics
Parameter
Delay Time
Symbol
Test Conditions
Min
Max
100
240
Units
ns
td
ns
µs
ns
ns
µs
Rise Time
tr
Storage Time
ts
tf
1.4
300
300
1.5
Fall Time
Saturated Turn-On Time
Saturated Turn-Off Time
tON
tOFF
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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