2N3735 [SEMICOA]
Type 2N3735 Geometry TBD Polarity NPN; 键入2N3735几何TBD极性NPN
| 型号： | 2N3735 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N3735 Geometry TBD Polarity NPN |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N3735
Ge ne ric Pa rt Numbe r:
2N3735
Type 2N3735
Geometry TBD
Polarity NPN
REF: MIL-PRF-19500/395
Qual Level: Pending
Features:
·
General-purpose NPN silicon
switching transistor which oper-
ates over a wide temperature
range.
·
·
Housed in a TO-39 case.
Also it will be available in chip
form using the TBD chip geome-
try.
TO-39
·
The Min and Max limits shown are
per MIL-PRF-19500/395 which
Semicoa meets in all cases.
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
VCEO
VCBO
VEBO
IC
Rating
40
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power, TA = +25oC
75
V
5.0
V
1.5
mA
W
PT
1.0
Power, TC = +25oC
PT
2.9
W
oC/mW
RJC
Thermal Resistance
Operating Junction Temperature
Storage Temperature
0.060
-55 to +200
-55 to +200
oC
oC
TJ
TSTG
Data Sheet No. 2N3735
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
IC = 10 mA
Symbol
Min
Max
Unit
V(BR)CBO
40
---
V
Collector-Emitter Breakdown Voltage
IC = 10 µA
V(BR)CEO
V(BR)EBO
ICBO1
75
5.0
---
---
---
V
V
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Base Cutoff Current
VCB = 30 V
250
100
nA
nA
Emitter-Base Cutoff Current
VEB = 4.0 V
IEBO1
---
Collector-Emitter Cutoff Current
VCE = 30 V, VEB = 2.0 V
VCB = 30 V, VEB = 2.0 V, TA = +150oC
ICEX1
ICEX2
---
200
250
nA
µA
---
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 10 mA, VCE = 1.0 V
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
30
40
40
20
20
15
---
---
---
---
---
---
---
---
IC = 150 mA, VCE = 1.0 V (pulse test)
IC = 500 mA, VCE = 1.0 V (pulse test)
IC = 1.0 A, VCE = 1.5 V (pulse test)
IC = 1.5 A, VCE = 5.0 V (pulse test)
IC = 500 mA, VCE = 1.0 V (pulsed), TA = +150oC
140
80
---
---
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
VCE(sat)1
VCE(sat)2
VCE(sat)3
VCE(sat)4
---
---
---
---
0.2
0.3
V dc
V dc
V dc
V dc
IC = 150 mA, IB = 15 mA (pulse test)
IC = 500 mA, IB = 50 mA (pulse test)
IC = 1.0 A, IB = 100 mA (pulse test)
0.9
0.30
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
VBE(sat)1
VBE(sat)2
VBE(sat)3
VBE(sat)4
---
---
0.8
1.0
V dc
V dc
V dc
V dc
Unit
IC = 150 mA, IB = 15 mA (pulse test)
IC = 500 mA, IB = 50 mA (pulse test)
IC = 1.0 A, IB = 100 mA (pulse test)
---
1.2
0.9
Min
1.4
Small Signal Characteristics
Symbol
Max
Forward Current Transfer Ratio
|hFE|
2.5
---
---
---
---
---
6.0
9.0
80
---
pF
pF
ns
ns
ns
IC = 50 mA, VCE = 10 V, f = 100 MHz
Open Circuit Output Capacitance
COBO
CIBO
td
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Delay Time
8.0
40
VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = 100 mA
Rise Time
tr
VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = 100 mA
Turn-off Time
toff
60
VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = IB2 = 100 mA
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