2C3866A [SEMICOA]
Chip Type 2C3866A Geometry 1007 Polarity NPN; 芯片型号2C3866A几何1007极性NPN![2C3866A](http://pdffile.icpdf.com/pdf1/p00030/img/icpdf/2C3866A_156310_icpdf.jpg)
型号: | 2C3866A |
厂家: | ![]() |
描述: | Chip Type 2C3866A Geometry 1007 Polarity NPN |
文件: | 总1页 (文件大小:34K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Data Sheet No. 2C3866A
Ge ne ric Pa c ka ge d Pa rts :
2N3866, 2N3866A
Chip Type 2C3866A
Geometry 1007
Polarity NPN
Chip type 2C3866A by Semicoa
Semiconductors provides perfor-
mance similar to these devices.
Product Summary:
APPLICATIONS: Designed for amplifier,
frequency multiplier and oscillator applica-
tions. Suitable for output, driver and predriver
stages in VHF and UHF equipment.
Part Numbers:
2N3866A, 2N3866, 2N3866AUB, SD3866A,
SD3866AF, SQ3866A, SQ3866AF
Features: Special Characteristics:
ft = 950 MHz (type) at 50 mA/15V
Mechanical Specifications
Top
Al - 15 kÅ min.
Au - 6.5 kÅ nom.
3.4 mils x 3.0 mils
3.4 mils x 3.0 mils
Metallization
Backside
Emitter
Base
Bonding Pad Size
8 mils nominal
Die Thickness
Chip Area
15 mils x 20 mils
Silox Passivated
Top Surface
Electrical Characteristics
TA = 25oC
Parameter
BVCEO
Test conditions
Min
30
Max
---
Unit
V dc
V dc
V dc
V dc
µA
IC = 5.0 mA
BVCBO
BVCER
BVEBO
ICEO
IC = 100 µA
55
---
IC = 5.0 mA, RBE = 10 Ohms
IE = 100 µA
55
---
3.5
---
---
VCE = 28 V, VEB = 2.0 V
IC = 360 mA dc, VCE = 5.0 V
IC = 50 mA dc, VCE = 5.0 V
20
hFE1
5.0
10
---
---
hFE2
200
---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 µs, duty cycle less than 2%.
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