SML75HB06 [SEME-LAB]
HIGH PERFORMANCE POWER SEMICONDUCTORS; 高性能功率半导体
| 型号： | SML75HB06 |
| 厂家： | 
SEME LAB |
| 描述： | HIGH PERFORMANCE POWER SEMICONDUCTORS |
| 文件： | 总7页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SML75HB06
Attributes:
-aerospace build standard
-high reliability
-lightweight
-metal matrix base plate
-AlN isolation
Maximum rated values/
Electrical Properties
Collector-emitter Voltage
600
V
A
Vces
DC Collector Current
Tc=75C
Tc=25C
Ic, nom
Ic
75
100
Repetitive peak Collector Cur-
rent
tp=1msec,Tc=75C
Icrm
150
260
A
Total PowerDissipation
Tc=25C
Ptot
W
Gate-emitter peak voltage
Vges
If
+/-20
75
V
A
A
DC Forward Diode
Current
Repetitive Peak
Forward Current
tp=1msec
Ifrm
150
I2t value per diode
Vr=0V, tp=10msec,
Tvj=125C
I2
500
A2sec
V
t
Isolation test voltage
RMS, 50Hz, t=1min
Visol
2500
Collector-emitter saturation
voltage
Ic=75A,Vge=15V, Tc=25C
Ic=75A,Vge=15V,Tc=125C
Vce(sat)
1.95 2.45
2.2
V
Gate Threshold voltage
Input capacitance
Vce=Vge, Tvj=25C
Vge(th) 4.5 5.5
6.5
V
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
Cies
Cres
Ices
3.2
nF
Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
0.3
nF
µA
µA
Collector emitter cut off
current
Vce=600V,Vge=0V,Tvj=25C
Vce=600V,Vge=0V,Tvj=125C
1
1
500
400
Gate emitter cut off current
Vce=0V,Vge=20V,Tvj=25C
Iges
Turn on delay time
Rise time
Ic=75A, Vcc=300V
Vge=+/15V,Rg=3Ω,Tvj=25C
Vge=+/-15V,Rg=3Ω,Tvj=125C
td,on
63
65
nsec
nsec
Ic=75A, Vcc=300V
Vge=+/-15V,Rg=3Ω,Tvj=25C
Vge=+/-15V,Rg=3Ω,Tvj=125C
tr
22
1025
nsec
nsec
Turn off delay time
Fall time
Ic=75A, Vcc=300V
Vge=+/-15V,Rg=3Ω,Tvj=25C
Vge=+/-15V,Rg=3Ω,Tvj=125C
td,off
155
170
nsec
nsec
Ic=75A, Vcc=300V
Vge=+/-15V,Rg=3Ω,Tvj=25C
Vge=+/-15V,Rg=3Ω,Tvj=125C
tf
20
35
nsec
nsec
Turn energy loss per pulse
Ic=75A,Vce=300V,Vge=15V
Rge=2.7Ω,Tvj=125C,L=35nH
Eon
Eoff
Isc
0.7
2.4
mJ
mJ
Turn off energy loss per pulse Ic=75A,Vce=300V, Vge=15V
Rge=Ω,Tvj=125C,L=30nH
SC Data
tp≤10µsec, Vge≤15V
Tvj≤125C,Vcc=360V,Vce(max)-
Vces-Lσdi/dT
340
A
Stray Module inductance
Terminal-chip resistance
Lσce
Rc
40
nH
1.2
mΩ
Diode characteristics
Forward voltage
Ic=75A,Vge=0V, Tc=25C
Ic=75A,Vge=0V, Tc=125C
Vf
1.25 1.6 V
1.2
Peak reverse recovery current If=75A, -di/dt=3000A/µsec
Vce=300V,Vge=-10V,Tvj=25C
Irm
Qr
95
115
A
Vce=300V,Vge=-10V,Tvj=125C
Recovered charge
If=75A, -di/dt=3000A/µsec
Vce=600V,Vge=-10V,Tvj=25C
Vce=600V,Vge=-10V,Tvj=125C
5.1
7.9
µC
Reverse recovery energy
If=75A, -di/dt=3000A/µsec
Vce=600V,Vge=-10V,Tvj=25C
Vce=600V,Vge=-10V,Tvj=125C
Erec
.
mJ
mJ
2.3
Thermal Properties
Min
Typ
Max
Thermal resistance junction to
case
Igbt
Diode
RθJ-C
0.48
0.89
K/W
K/W
Thermal resistance case to
heatsink
RθC-hs
0.03
Maximum junction temperature
Maximum operating temperature
Tvj
150
125
C
C
Top
-55
-55
Storage Temperature
Tstg
125
C
CIRCUIT DIAGRAM
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