SML60B18 [SEME-LAB]

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET


型号：	SML60B18
厂家：	SEME LAB
描述：	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET 晶体晶体管开关脉冲高压局域网高电压电源
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SML60B18

TO–247AD Package Outline.

Dimensions in mm (inches)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

15.49 (0.610)

16.26 (0.640)

POWER MOSFETS

3.55 (0.140)

3.81 (0.150)

V_DSS

600V

18A

1.65 (0.065)

2.13 (0.084)

0.40 (0.016)

0.79 (0.031)

I_D(cont)

2.87 (0.113)

3.12 (0.123)

1.01 (0.040)

1.40 (0.055)

R_DS(on)0.350

2.21 (0.087)

2.59 (0.102)

5.25 (0.215)

BSC

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Popular TO–247 Package

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Drain – Source Voltage

600

DSS

Continuous Drain Current

Pulsed Drain Current

Gate – Source Voltage

±20

Gate – Source Voltage Transient

±30

GSM

Total Power Dissipation @ T

Derate Linearly

= 25°C

280

case

2.24

–55 to 150

300

W/°C

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

T , T

STG

°C

Avalanche Current (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting T = 25°C, L = 7.47mH, R = 25 , Peak I = 18A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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SML60B18

STATIC ELECTRICAL RATINGS (T

= 25°C unless otherwise stated)

case

Characteristic

Test Conditions

Min. Typ. Max. Unit

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current

= 0V , I = 250 A

600

DSS

= V

DSS

= 0V)

= 0.8V

, T = 125°C

250

DSS

Gate – Source Leakage Current

Gate Threshold Voltage

= ±30V , V

= 0V

±100 nA

GSS

= V

> I

, I = 1.0mA

GS(TH)

x R

Max

D(ON)

DS(ON)

On State Drain Current

D(ON)

= 10V

= 10V , I = 0.5 I [Cont.]

Drain – Source On State Resistance

0.35

DS(ON)

DYNAMIC CHARACTERISTICS

Characteristic

Test Conditions

Min. Typ. Max. Unit

Input Capacitance

= 0V

3450

iss

Output Capacitance

= 25V

412

153

138

oss

rss

Reverse Transfer Capacitance

f = 1MHz

Total Gate Charge

= 10V

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–on Delay Time

Rise Time

= 0.5 V

DSS

I = I [Cont.] @ 25°C

= 15V

d(on)

= 0.5 V

DSS

Turn-off Delay Time

Fall Time

I = I [Cont.] @ 25°C

d(off)

= 1.6

SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic

Test Conditions

Min. Typ. Max. Unit

Continuous Source Current (Body Diode)

Pulsed Source Current

Diode Forward Voltage

(Body Diode)

= 0V , I = – I [Cont.]

1.3

Reverse Recovery Time

Reverse Recovery Charge

I = – I [Cont.] , dl / dt = 100A/ s

440

I = – I [Cont.] , dl / dt = 100A/ s

S D s

THERMAL CHARACTERISTICS

Characteristic

Min. Typ. Max. Unit

Junction to Case

0.45

°C/W

Junction to Ambient

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%

3) See MIL–STD–750 Method 3471

CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

6/99

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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