D2022UK [SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
| 型号： | D2022UK |
| 厂家： | 
SEME LAB |
| 描述： | METAL GATE RF SILICON FET |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D2022UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
B
H
C
G
2
1
3
4
25W – 28V – 500MHz
PUSH–PULL
A
D
E
5
F
I
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
N
M
O
J
K
DQ
• VERY LOW C
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 1
GATE 2
rss
DRAIN 2
GATE 1
PIN 4
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
B
C
D
E
mm
16.38
1.52
45°
6.35
3.30
14.22
Tol.
Inches
Tol.
0.010
0.005
5°
0.26
0.13
5°
0.13
0.13
0.13
0.645
0.060
45°
• HIGH GAIN – 13 dB MINIMUM
0.250
0.130
0.560
0.005
0.005
0.005
F
G
H
I
J
K
M
N
O
1.27 x 45° 0.13 0.05 x 45° 0.005
APPLICATIONS
• VHF/UHF COMMUNICATIONS
1.52
6.35
0.13
2.16
1.52
5.08
18.90
0.13
0.13
0.02
0.13
0.13
MAX
0.13
0.060
0.250
0.005
0.085
0.060
0.200
0.744
0.005
0.005
0.001
0.005
0.005
MAX
from 50 MHz to 1 GHz
0.005
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
125W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
65V
±20V
DSS
GSS
I
5A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
* Per Side
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab Ltd. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3827
Issue 2
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
D2022UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
Test Conditions
PER SIDE
case
Parameter
Min.
Typ.
Max. Unit
Drain–Source Breakdown
BV
V
= 0
I = 10mA
65
V
DSS
GS
D
Voltage
Zero Gate Voltage
I
V
= 28V
= 20V
V
= 0
1
mA
DSS
DS
GS
Drain Current
I
Gate Leakage Current
V
V
V
= 0
= V
1
7
µA
V
GSS
GS
DS
V
g
Gate Threshold Voltage*
Forward Transconductance*
I = 10mA
1
GS(th)
D
DS
GS
V
= 10V
I = 1A
0.9
S
fs
DS
D
TOTAL DEVICE
G
Common Source Power Gain
Drain Efficiency
P
V
= 25W
13
40
dB
%
PS
O
η
= 28V
I
= 0.5A
DS
DQ
VSWR
Load Mismatch Tolerance
f = 500MHz
20:1
—
PER SIDE
C
Input Capacitance
Output Capacitance
V
V
= 28V
= 28V
= 28V
V
V
V
= –5V f = 1MHz
60
30
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
C
= 0
= 0
f = 1MHz
f = 1MHz
oss
C
Reverse Transfer Capacitance V
2.5
rss
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 1.4°C / W
THj–case
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab Ltd. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3827
Issue 2
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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