D1231UK [SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
| 型号： | D1231UK |
| 厂家： | 
SEME LAB |
| 描述： | METAL GATE RF SILICON FET |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D1231UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
Dimensions in mm.
2.313
± 0.2
5.50 ± 0.15
0.3 R.
4 PL.
1.27 ± 0.05
2 PL.
10W – 12.5V – 500MHz
SINGLE ENDED
2 PL.
0.47
1.65
2 PL.
4
3
5
6
7
8
1.27
1.27
1.27
3.00 2.07
0.381
0.360
± 0.005
6.50 ±
0.15
2 PL. 2 PL.
2
1
0.10 R.
TYP.
0.47
2 PL.
FEATURES
0.80
4 PL.
0.10
TYP.
0.508
0.10
TYP.
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
4.90 ± 0.15
• VERY LOW C
rss
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
• SIMPLE BIAS CIRCUITS
• LOW NOISE
PIN 7 – GATE
PIN 8 – SOURCE
• HIGH GAIN – 10 dB MINIMUM
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
30W
40V
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
DSS
GSS
±20V
I
10A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99
D1231UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ.
Max. Unit
Drain–Source
BV
V
= 0
I = 10mA
40
V
DSS
GS
D
Breakdown Voltage
Zero Gate Voltage
I
V
V
= 12.5V
= 20V
V
= 0
1
mA
DSS
DS
GS
GS
Drain Current
I
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
V
V
= 0
= V
1
7
µA
V
GSS
DS
DS
V
g
I = 10mA
0.5
0.8
10
GS(th)
D
GS
V
P
V
= 10V
I = 1A
S
fs
DS
D
G
= 10W
O
dB
%
PS
η
= 12.5V
I
= 0.4A
DQ
50
DS
VSWR Load Mismatch Tolerance
f = 500MHz
= 0V
20:1
—
pF
pF
pF
C
C
C
Input Capacitance
V
V
V
V
= –5V f = 1MHz
60
40
4
iss
DS
GS
GS
GS
Output Capacitance
= 12.5V V
= 12.5V V
= 0
= 0
f = 1MHz
f = 1MHz
oss
rss
DS
DS
Reverse Transfer Capacitance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 6°C / W
THj–case
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99
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