BFX41 [SEME-LAB]
PNP SILICON EPITAXIAL TRANSISTOR; PNP硅外延晶体管
| 型号： | BFX41 |
| 厂家： | 
SEME LAB |
| 描述： | PNP SILICON EPITAXIAL TRANSISTOR |
| 文件： | 总3页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFX38
BFX39
BFX40
BFX41
MECHANICAL DATA
Dimensions in mm (inches)
PNP SILICON EPITAXIAL
TRANSISTOR
8
9
.
.
8
4
9
0
(
(
0
0
.
.
3
3
5
7
)
)
7
.
7
5
(
0
.
3
0
5
)
8
.
5
1
(
0
.
3
3
5
)
6
6
.
.
1
6
0
0
(
(
0
0
.
.
2
2
4
6
0
0
)
)
APPLICATIONS
• General Purpose Industrial Applications
0
.
8
9
a
m
x
.
)
(
0
0
.
0
3
5
1
2
.
7
(
0
.
5
0
0
)
m
i
n
.
7
8
.
.
7
5
5
1
(
(
0
0
.
.
3
3
0
3
5
5
)
)
d
i
a
.
DESCRIPTION
5
.
0
8
(
0
.
2
0
0
)
t
y
p
.
The BFX38-41 are ailicon planar epitaxial
PNP transitors in Jedec TO39 metal case,
designed for a wide variety of applications.
2
.
5
4
2
(
0
.
1
0
0
)
1
3
0
1
.
.
6
1
6
4
(
(
0
0
.
.
0
0
2
4
6
5
)
)
0
0
.
.
7
8
1
6
(
(
0
0
.
.
0
0
2
3
8
4
)
)
4
5
°
TO39 PACKAGE
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
BFX38
BFX39
BFX40
BFX41
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
-55V
-75V
VCBO
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
-55V
-75V
V
V
CEO
EBO
-5V
-1A
I
C
0.8W
4W
P
Total Power Dissipation T
T
< 25°C
tot
amb
< 25°C
case
–55 to 200°C
T
T
Storage and Junction Temperature
stg, j
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.9/00
BFX38
BFX39
BFX40
BFX41
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
j
Parameter
Test Conditions
Min.
Typ.
Max. Unit
BFX38
BFX39
BFX40
BFX41
BFX38
BFX39
BFX40
BFX41
BFX38
BFX39
BFX40
BFX41
V
= - 40V I = 0
- 0.2
- 50
-50
- 50
-50
nA
CB
E
T
= 125°C
-0.25
- 0.2
-0.25
A
amb
I
Collector Cutoff Current
CBO
V
= - 50V I = 0
nA
A
CB
E
T
= 125°C
amb
I = -10 A
I = 0
-55
- 75
-55
-75
-5
C
E
V
Collector-Base Breakdown Voltage
V
V
(BR)CBO
I = -10 A
I = 0
C
E
I = -10mA
I = 0
C
E
Collector Emitter Sustaining
Voltage
V
CEO(SUS)*
I = -10mA
I = 0
C
E
Emitter - Base
V
V
V
ALL
ALL
ALL
I = 10 A
I = 0
V
V
V
(BR)EBO
CE(SAT)*
BE(SAT)*
E
C
Breakdown Voltage
Collector- Emitter Saturation
Voltage
- 0.12
- 0.3
- 0.8
-0.9
- 0.15
- 0.5
- 0.9
-1.1
I = -150mA I = -15mA
C
E
I = - 500mA I = - 50mA
C
E
Base - Emitter Saturation
Voltage
I = -150mA I = -15mA
C
E
I = - 500mA I = - 50mA
C
E
BFX38 BFX40
I = - 100 A
V
= - 5V
CE
60
85
60
90
C
*I = - 100mA V = - 5V
130
120
C
CE
*I = - 500mA V = - 5V
C
CE
BFX39 BFX41
I = - 100 A
V
= - 5V
30
40
25
45
70
65
C
CE
*I = - 100mA V = - 5V
C
CE
*I = - 500mA V = - 5V
C
CE
CE
h
DC Current Gain
—
FE
*I = - 1A
V
= - 5V
C
BFX38
BFX39
BFX40
BFX41
30
15
25
10
*I = - 100mA V = - 5V
C
CE
T
= - 55°C
amb
BFX38 BFX40
BFX39 BFX41
30
15
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.9/00
BFX38
BFX39
BFX40
BFX41
Parameter
Test Conditions
Min.
Typ.
Max. Unit
I = -50mA
V
V
V
V
V
= -10V
= -0.5V
= -10V
= -30V
= - 30V
= - 30V
C
CE
EB
CB
CC
CC
CC
f
Transitions Frequency
100
150
MHz
T
f =100MHz
I = 0
C
C
C
Emitter - Base Capacitance
Collector - Base Capacitance
Turn-on time
75
15
120
pF
EBO
f =1MHz
I = 0
E
20
CBO
f =1MHz
I = - 500mA
C
t
t
t
33
100
on
I
= -50mA
B1
I = - 500mA
C
Storage Time
160
27
350
50
ns
s
f
I
= - I = -50mA
B2
B1
I = - 500mA
V
C
Fall Time
I
= - I = -50mA
B2
B1
* Pulsed: pulse duration = 300 s, duty cycle = 1%
THERMAL CHARACTERISTICS
R
R
Thermal Resistance Junction to case
Thermal Resistance Junction to ambient
44
°C/W
th(j-case)
th(j-amb)
219 °C/W
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.9/00
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