BFX34 [SEME-LAB]
HIGH CURRENT GENERAL PURPOSE TRANSISTOR; 大电流通用晶体管
| 型号： | BFX34 |
| 厂家： | 
SEME LAB |
| 描述： | HIGH CURRENT GENERAL PURPOSE TRANSISTOR |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
BFX34
•
•
•
•
Silicon Epitaxial NPN Transistor
High Speed, Low Saturation Switch
Hermetic TO39 Package
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
V
V
V
I
Collector – Base Voltage
120V
CBO
CEO
EBO
Collector – Emitter Voltage
Emitter – Base Voltage
60V
6V
Continuous Base Current
Continuous Collector Current
Peak Repetitive Collector Current
1.0A
B
I
I
2A
C
5A
CM
P
T = 25°C
A
T = 25°C
C
Total Power Dissipation at
870mW
5W
D
T
T
Junction Temperature Range
Storage Temperature Range
200°C
-65 to +200°C
J
stg
THERMAL PROPERTIES
Symbols Parameters
Max.
200
Unit
°C/W
°C/W
R
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
θJA
θJC
R
35
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 5569
Issue 2
Page 1 of 3
Website: http://www.semelab-tt.com
HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
BFX34
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ. Max. Unit
(1)
Collector-Base
V
I
I
= 5mA
V
= 0
120
(BR)CBO
C
C
BE
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
(1)
V
= 10mA
I = 0
60
(BR)CEO
B
(1)
V
I = 1.0mA
I = 0
C
V
Emitter - Base Voltage
6
EBO
E
(1)
Collector-Emitter
Saturation Voltage
Base-Emitter
V
0.4
1.3
1.0
1.6
CE(sat)
I
= 5A
I = 0.5A
B
C
(1)
V
BE(sat)
Saturation Voltage
I
V
V
I
= 60V
V
I
= 0
Collector Cut-Off Current
Emitter Cut-Off Current
0.02
10
10
CES
CE
EB
BE
µA
I
= 4V
= 0
0.05
100
75
EBO
C
= 1.0A
= 1.5A
= 2A
V
V
V
= 2V
C
CE
CE
CE
h
I
I
= 0.6V
= 2V
DC Current Gain
-
FE
C
C
40
70
80
150
DYNAMIC CHARACTERISTICS
I
= 0.5A
V
= 5V
C
CE
f
Transition Frequency
100
MHz
pF
T
f = 20MHz
C
C
t
V
V
V
I
= 10V
= 0.5V
= 20V
Output Capacitance
Input Capacitance
Turn on Time
f = 1.0MHz
f = 1.0MHz
40
100
500
0.6
obo
ibo
CB
EB
300
I
= 0.5A
on
CC
C
µS
t
= -I = 50mA
Turn off Time
1.2
off
B1 B2
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Document Number 5569
Issue 2
Page 2 of 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
BFX34
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO39 (TO-205AD) METAL PACKAGE
Underside View
PIN 1 - Emitter
PIN 2 - Base
PIN 3 - Collector
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 5569
Issue 2
Page 3 of 3
Website: http://www.semelab-tt.com
相关型号：
BFX34LEADFREE
Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明