2N6583 [SEME-LAB]

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package; 在一个密封TO3金属封装的双极NPN装置
2N6583
型号: 2N6583
厂家: SEME LAB    SEME LAB
描述:

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
在一个密封TO3金属封装的双极NPN装置

晶体 晶体管 装置 局域网
文件: 总1页 (文件大小:14K)
下载:  下载PDF数据表文档文件

2N6583E3

Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6584

TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-3

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17 ETC

2N6584

Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6584E3

Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6585

TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-210AC

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16 ETC

2N6585

Power Bipolar Transistor, 7A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, ISOLATED TO-61, 3 PIN

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0 VISHAY

2N6586

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC

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25 ETC

2N6586

Power Bipolar Transistor, 7A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, ISOLATED TO-61, 3 PIN

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0 VISHAY

2N6586E3

Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

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0 MICROSEMI

2N6587

TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC

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20 ETC

2N6587

SI NPN POWER BJT

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10 NJSEMI

2N6588

TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-210AC

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30 ETC

2N6589

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC

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12 ETC

2N6589

Power Bipolar Transistor, 7.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, ISOLATED TO-61, 3 PIN

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0 VISHAY

2N6589E3

Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

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0 MICROSEMI