2N5320 [SEME-LAB]
SILICON PLANAR EPITAXIAL NPN TRANSISTOR; 硅平面外延NPN晶体管
| 型号： | 2N5320 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
•
Low V
, h 30-130 (@V =4V, I =0.5A)
CE(sat) FE CE
C
•
•
Hermetic TO-39 Metal package.
Ideally Suited For Medium Power Amplifier And
Switching Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
100V
CBO
CEO
EBO
75V
7V
2A
C
I
1.0A
B
P
T = 25°C
A
Total Power Dissipation at
1.0W
D
Derate Above 25°C
5.71mW/°C
7W
P
T = 25°C
C
Total Power Dissipation at
D
Derate Above 25°C
40mW/°C
-65 to +200°C
-65 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
stg
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ. Max. Units
R
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
175
25
°C/W
°C/W
θJA
R
θJC
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8582
Issue 1
Website: http://www.semelab-tt.com
Page 1 of 3
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
V
I
= 10mA
= 100V
I = 0
B
75
V
(BR)CEO
C
V
V
V
V
T
= -1.5V
100
5
µA
mA
µA
CE
BE
BE
I
= 70V
= -1.5V
Collector Cut-Off Current
CEX
CE
= 150°C
A
I
V
I
= 7V
I
= 0
Emitter Cut-Off Current
100
130
EBO
EB
C
= 500mA
= 1.0A
V
V
= 4V
30
10
C
CE
(1)
Forward-current transfer
ratio
h
FE
I
I
I
= 2V
C
C
C
CE
(1)
Collector-Emitter Saturation
Voltage
V
= 500mA
= 500mA
I = 50mA
B
0.5
1.1
CE(sat)
V
(1)
V
V
= 4V
Base-Emitter Voltage
BE(on)
CE
DYNAMIC CHARACTERISTICS
I
= 50mA
V
V
V
= 4V
C
CE
CC
CC
Small signal forward-current
transfer ratio
| h
|
5
fe
f = 10MHz
I
I
I
I
= 500mA
= 50mA
= 30V
= 30V
C
t
Turn-On Time
80
on
B1
ns
= 500mA
C
t
Turn-Off Time
800
off
= - I = 50mA
B2
B1
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8582
Issue 1
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 2 of 3
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
max.
(0.035)
12.70
(0.500)
0.41 (0.016)
0.53 (0.021)
dia.
min.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8582
Issue 1
Website: http://www.semelab-tt.com
Page 3 of 3
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