2N3700 [SEME-LAB]
SILICON NPN TRANSISTOR; 硅NPN晶体管
| 型号： | 2N3700 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON NPN TRANSISTOR |
| 文件： | 总3页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON NPN TRANSISTOR
2N3700
•
•
•
•
High Voltage, Medium Power Silicon Planar NPN Transistor
Hermetic TO18 Metal Package
High Reliability Screening Options Available
CECC and Space Quality Level Options
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
140V
CBO
CEO
EBO
80V
7.0V
Continuous Collector Current
Total Power Dissipation at
1.0A
C
P
T = 25°C
A
0.5W
D
Derate Above T = 25°C
A
T = 25°C
C
2.9mW/°C
1.0W
Derate Above T = 25°C
C
5.7mW/°C
-65 to +200°C
-65 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
stg
THERMAL PROPERTIES
Symbols Parameters
Min. Typ. Max. Unit
R
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
350
175
°C/W
°C/W
θJA
θJC
R
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 5266
Issue 2
Website: http://www.semelab-tt.com
Page 1 of 3
SILICON NPN TRANSISTOR
2N3700
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Symbols Parameters
Test Conditions
Min. Typ. Max. Unit
(1)
Collector-Emitter
Breakdown Voltage
V
I
= 30mA
= 7.0V
I = 0
B
80
V
(BR)CEO
C
V
V
I
I
= 0
= 0
10
10
µA
EB
C
C
I
I
Emitter-Base Cut-Off Current
EBO
CES
= 5.0V
= 90V
EB
CE
nA
µA
Collector-Emitter Cut-Off
Current
V
10
T
= 150°C
5
A
I
V
I
= 140V
I = 0
E
Collector-Base Cut-Off Current
10
CBO
CB
= 0.10mA
= 10mA
V
V
V
T
= 10V
50
90
C
CE
CE
CE
I
I
= 10V
= 10V
C
C
= 150mA
100
40
300
(1)
h
DC Current Gain
FE
= -55°C
= 10V
A
I
I
I
I
= 500mA
= 1.0A
V
V
50
C
C
C
C
CE
= 10V
15
CE
= 150mA
= 500mA
I = 15mA
B
0.2
0.5
(1)
Collector-Emitter
Saturation Voltage
V
V
CE(sat)
I = 50mA
B
V
(1)
Base-Emitter
Saturation Voltage
I
= 150mA
I = 15mA
B
1.1
BE(sat)
C
DYNAMIC CHARACTERISTICS
I
= 50mA
V
V
= 10V
C
CE
CE
Magnitude of Small-Signal
Short-Circuit Current Gain
|h |
4
5
20
400
12
fe
f = 20MHz
= 1.0mA
I
= 5.0V
C
Small-Signal Short-Circuit
Current Gain
h
80
fe
f = 1.0KHz
= 10V
V
I = 0
CB
f = 1.0MHz
= 0.5V
E
C
C
Output Capacitance
Input Capacitance
pF
pF
obo
ibo
V
I = 0
EB
f = 1.0MHz
C
60
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 5266
Issue 2
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 2 of 3
SILICON NPN TRANSISTOR
2N3700
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
1
2
TO18 (TO-206AA) METAL PACKAGE
Underside View
PIN 1 - Emitter
PIN 2 - Base
PIN 3 - Collector
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 5266
Issue 2
Website: http://www.semelab-tt.com
Page 3 of 3
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