SCS421SDF [SECOS]
Small Signal Schottky Barrier Diode; 小信号肖特基二极管
| 型号： | SCS421SDF |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Small Signal Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCS421SDF
VOLTAGE 40 V, 0.1 A
Small Signal Schottky Barrier Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
A
DESCRIPTION
L
3
3
The SCS421SDF is designed for low power rectification.
Top View
E
C B
1
1
2
2
K
F
K
D
3
MARKING: LV6
H
J
G
LV6
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
0.100 REF.
0.525 REF.
1
A
2
NC
A
B
C
D
E
F
1.80
1.80
1.15
0.80
1.20
0.20
2.20
2.45
1.35
1.10
1.40
0.40
G
H
J
K
L
0.08
-
0.25
-
0.650 TYP.
MAXIMUM RATINGS(TA=25°C unless otherwise specified.)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
VALUE
40
UNIT
V
V
V
A
pF
A
mW
°C
VRRM
VRMS
VDC
IFSM
CJ
IO
PD
TJ,TSTG
28
40
1.0
6.0
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec Single Half Sine-Wave
Typical Junction Capacitance between Terminal 1
Maximum Average Forward Rectified Current
Total Power Dissipation
0.1
225
125, -40~125
Junction & Storage Temperature
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified.)
PARAMETER
SYMBOL
MIN
40
-
-
-
MAX
-
340
550
30
UNIT
V
mV
mV
µA
TEST CONDITION
Reverse Breakdown Voltage
V(BR)R
IR=100µA
IF1=10mA
IF2=100mA
VR=10V
Maximum Instantaneous Forward Voltage
VF
Maximum Average Reverse Current
IR
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Nov-2009 Rev. A
Page 1 of 2
SCS421SDF
VOLTAGE 40 V, 0.1 A
Small Signal Schottky Barrier Diode
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Nov-2009 Rev. A
Page 2 of 2
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