MMBTA43 [SECOS]
0.5A , 200V NPN Plastic Encapsulated Transistor; 0.5A ， 200V NPN塑料封装晶体管
| 型号： | MMBTA43 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 0.5A , 200V NPN Plastic Encapsulated Transistor |
| 文件： | 总1页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA43
0.5A , 200V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
ꢀ
ꢀ
ꢀ
High Voltage Application
Telephone Application
Complementary to MMBTA93
A
L
3
3
Top View
C B
1
1
2
MARKING
ABX
2
K
F
E
D
H
J
G
PACKAGE INFORMATION
Package
MPQ
Leader Size
Millimeter
Millimeter
Collector
REF.
REF.
Min.
Max.
3.04
2.55
1.40
1.15
2.04
0.50
Min.
0.09
0.45
0.08
Max.
0.18
0.60
0.177
SOT-23
3K
7 inch
3
A
B
C
D
E
F
2.80
2.10
1.20
0.89
1.78
0.30
G
H
J
K
L
0.6 REF.
1
Base
0.89
1.02
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
200
V
V
Collector to Emitter Voltage
200
Emitter to Base Voltage
5
500
V
Collector Current - Continuous
Collector Power Dissipation
mA
mW
°C / W
°C
PC
350
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
RθJA
TJ, TSTG
357
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
200
200
5
-
-
-
-
-
-
-
-
-
-
-
V
V
V
IC=100µA, IE=0
-
IC=1mA, IB=0
-
-
IE=100µA, IC=0
1
hFE(1)
40
40
40
-
VCE=10V, IC=10mA
VCE=10V, IC=1mA
VCE=10V, IC=30mA
IC=20mA, IB=2mA
IC=20mA, IB=2mA
1
DC Current Gain
hFE(2)
-
1
hFE(3)
-
1
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(sat)
0.5
0.9
-
V
V
1
VBE(sat)
-
fT
50
-
MHz VCE=20V, IE=10mA, f=100MHz
pF CB=20V, I =0, f=1MHz
Collector output capacitance
Note:
C
ob
4
V
E
1. Pulse test: pulse width ≦ 300µs, duty cycle ≦ 2.0%
.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A
Page 1 of 1
相关型号：
MMBTA43D87Z
Small Signal Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
MMBTA43L99Z
Small Signal Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明