MMBD4448T [SECOS]
Plastic-Encapsulated Switching Diode; 塑料封装开关二极管
| 型号： | MMBD4448T |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Plastic-Encapsulated Switching Diode |
| 文件： | 总2页 (文件大小：688K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD4448T Series
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-523
z
z
z
Fast switching speed
For general purpose switching applications
High conductance
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
MARKING
D
Part
Name
MMBD4448T
MMBD4448TA
A6
MMBD4448TC
A7
MMBD4448TS
A8
H
J
G
A3
Marking
Circuit
Millimeter
Millimeter
Min.
0.00
0.28
0.10
-
REF.
REF.
Min.
Max.
1.70
1.75
0.85
0.90
1.10
0.33
Max.
0.15
0.40
0.20
-
A
B
C
D
E
F
1.50
1.45
0.75
0.70
0.90
0.25
G
H
J
K
L
0.75
0.85
ABSOLUTE MAXIMUM RATINGS (Single Diode @ Ta = 25°C)
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRM
Value
Unit
100
V
VRRM
VRWM
VR
80
V
RMS Reverse Voltage
VR(RMS)
IFM
57
V
Forward Continuous Current
Average Rectified Output Current
500
250
mA
mA
IO
4.0
1.5
@ t = 1.0µs
@ t = 1.0s
Non-Repetitive Peak Forward Surge Current
IFSM
A
Power Dissipation
PD
150
833
mW
℃ / W
℃
Thermal Resistance Junction to Ambient
Storage Temperature
RθJA
TSTG
-65 ~ 150
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
VR
VF1
VF2
VF3
VF4
80
-
V
V
V
V
V
IR = 2.5 µA
IF = 5.0 mA
IF = 10 mA
IF = 100 mA
IF = 150 mA
0.62
0.720
0.855
1.00
1.25
-
-
-
Forward Voltage (Note 2)
-
-
-
-
0.10
25
µA
nA
pF
nS
VR = 70 V
Peak Reverse Current (Note 2)
IR
VR = 20 V
Total Capacitance
CT
tRR
3.50
4.00
VR = 6 V, f = 1.0 MHz
VR = 6 V, IF = 5.0 mA
Reverse Recovery Time
01-Jun-2008 Rev. A
Page 1 of 2
MMBD4448T Series
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES (MMBD4448T)
01-Jun-2008 Rev. A
Page 2 of 2
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