DTC123YKA [SECOS]

NPN Digital Transistors (Built-in Resistors); NPN数字晶体管(内置电阻)
DTC123YKA
型号: DTC123YKA
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Digital Transistors (Built-in Resistors)
NPN数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:218K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTC123YE/DTC123YUA/DTC123YKA  
DTC123YCA/TC123YSA  
Elektronische Bauelemente  
NPN Digital Transistors (Built-in Resistors)  
FEATURES  
* Built-in bias resistors enable the configuration of  
an inverter circuit without connecting input resistors  
(see equivalent circuit).  
* Only the on/off confitions need to be set for operation,  
making device design easy.  
* The bias resistors consis of thin-film resistors with  
compete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
PIN CONNENCTIONS AND MARKING  
DTC123YE  
DTC123YUA  
Abbreviated symbol: 62  
SOT-523  
SOT-323  
Abbreviated symbol: 62  
DTC123YCA  
DTC123YKA  
SOT-23-3L  
SOT-23  
Abbreviated symbol: 62  
Abbreviated symbol: 62  
DTC123YSA  
TO-92S  
Any changing of specification will not be informed indivlidua  
http://www.SeCoSGmbH.com  
01-Jun-2002 Rev. A  
Page 1 of 2  
DTC123YE/DTC123YUA/DTC123YKA  
DTC123YCA/TC123YSA  
Elektronische Bauelemente  
NPN Digital Transistors (Built-in Resistors)  
Absolute maximum ratings(Ta=25)  
Limits (DTC123Y)  
Parameter  
Symbol  
Unit  
E
UA  
KA  
50  
CA  
SA  
VCC  
VIN  
V
V
Supply voltage  
Input voltage  
-5~12  
100  
IO  
mA  
Output current  
IC(MAX)  
Pd  
100  
150  
200  
300  
mW  
Power dissipation  
Tj  
150  
Junction temperature  
Storage temperature  
Tstg  
-55~150  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
VCC=5V, IO=100µA  
VO=0.3V, IO=20mA  
IO/II=10mA/0.5mA  
VI=5V  
0.3  
Input voltage  
V
3
Output voltage  
Input current  
0.1  
0.3  
3.8  
0.5  
V
mA  
µA  
Output current  
IO(off)  
GI  
VCC=50V, VI=0  
VO=5V, IO=10mA  
-
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
33  
1.54  
3.6  
R1  
2.2  
4.5  
250  
2.86  
5.5  
K  
R2/R1  
fT  
-
MHz  
VO=10V, IO=5mA, f=100MHz  
Typical Characteristics  
Any changing of specification will not be informed individua  
http://www.SeCoSGmbH.com  
01-Jun-2002 Rev. A  
Page 2 of 2  

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