DTC114YCA [SECOS]

NPN Digital Transistors (Built-in Resistors); NPN数字晶体管(内置电阻)
DTC114YCA
型号: DTC114YCA
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Digital Transistors (Built-in Resistors)
NPN数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:255K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTC114YE/DTC114YUA/DTC114YKA  
DTC114YCA/TC114YSA  
Elektronische Bauelemente  
NPN Digital Transistors (Built-in Resistors)  
FEATURES  
* Built-in bias resistors enable the configuration of  
an inverter circuit without connecting input resistors  
(see equivalent circuit).  
* Only the on/off confitions need to be set for operation,  
making device design easy.  
* The bias resistors consis of thin-film resistors with  
compete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
PIN CONNENCTIONS AND MARKING  
DTC114YE  
DTC114YUA  
Abbreviated symbol: 64  
SOT-523  
DTC114YKA  
SOT-23-3L  
SOT-323  
Abbreviated symbol: 64  
DTC114YCA  
Abbreviated symbol: 64  
SOT-23  
Abbreviated symbol: 64  
DTC114YSA  
TO-92S  
Any changing of specification will not be informed indivlidua  
http://www.SeCoSGmbH.com  
01-Jun-2002 Rev. A  
Page 1 of 2  
DTC114YE/DTC114YUA/DTC114YKA  
DTC114YCA/TC114YSA  
Elektronische Bauelemente  
NPN Digital Transistors (Built-in Resistors)  
Absolute maximum ratings(Ta=25)  
Limits (DTC114Y)  
Parameter  
Symbol  
Unit  
E
UA  
KA  
CA  
SA  
Supply voltage  
VCC  
VIN  
50  
V
V
Input voltage  
-6to+40  
70  
IO  
mA  
mA  
mW  
Output current  
IC(Max.)  
PC  
100  
Power dissipation  
150  
200  
300  
Junction temperature  
Tj  
150  
Storage temperature  
Tstg  
-55 to+ 150  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
VCC=5V ,IO=100µA  
VO=0.3V ,IO=1mA  
IO/II=5mA/0.25mA  
VI=5V  
0.3  
Input voltage  
V
1.4  
Output voltage  
Input current  
0.3  
0.88  
0.5  
V
mA  
µA  
Output current  
IO(off)  
GI  
VCC=50V ,VI=0  
VO=5V ,IO=5mA  
DC current gain  
68  
7
Input resistance  
Resistance ratio  
Transition frequency  
Typical Characteristics  
R1  
10  
4.7  
250  
13  
K  
R2/R1  
fT  
3.7  
5.7  
MHz  
Vo=10V ,Io=5mA,f=100MHz  
Any changing of specification will not be informed individua  
http://www.SeCoSGmbH.com  
01-Jun-2002 Rev. A  
Page 2 of 2  

相关型号:

DTC114YCA-MORSG

NPN Small Signal Transistor
TSC

DTC114YCA-TP

Digital Transistors
MCC

DTC114YCA-TP-HF

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC

DTC114YCAHZG

DTC114YCAHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。
ROHM

DTC114YCAP

Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
MCC

DTC114YCARS

NPN Small Signal Transistor
TSC

DTC114YCARSG

NPN Small Signal Transistor
TSC

DTC114YCAT216

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
ROHM

DTC114YCA_11

Digital Transistors
MCC

DTC114YE

CASE 463-01, STYLE 1 SOT-416/SC-90
MOTOROLA

DTC114YE

Digital transistors (built-in resistors)
ROHM

DTC114YE

Bias Resistor Transistor NPN Silicon
WEITRON